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Journal of Electronic Materials

Ausgabe 12/2008

Inhalt (18 Artikel)

Foreword

Archie Holmes, Christine Wang, Diana Huffaker

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, T.J. Rotter, G. Balakrishnan, L.R. Dawson, D.L. Huffaker

Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Siddhartha Ghosh, Shubhrangshu Mallick, Koushik Banerjee, Christoph Grein, Silviu Velicu, Jun Zhao, Don Silversmith, Jean Baptist Rodriguez, Elena Plis, Sanjay Krishna

Interband Cascade Lasers with Wavelengths Spanning 2.9 μm to 5.2 μm

C.L. Canedy, W.W. Bewley, J.R. Lindle, J.A. Nolde, D.C. Larrabee, C.S. Kim, M. Kim, I. Vurgaftman, J.R. Meyer

Power Generator Modules of Segmented Bi2Te3 and ErAs:(InGaAs)1−x (InAlAs) x

Gehong Zeng, Je-Hyeong Bahk, John E. Bowers, Hong Lu, Joshua M.O. Zide, Arthur C. Gossard, Rajeev Singh, Zhixi Bian, Ali Shakouri, Suzanne L. Singer, Woochul Kim, Arun Majumdar

GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction

B.P. Tinkham, O. Romanyuk, W. Braun, K.H. Ploog, F. Grosse, M. Takahasi, T. Kaizu, J. Mizuki

Open Access

Comparison of MBE Growth of InSb on Si (001) and GaAs (001)

T. Lien Tran, Fariba Hatami, W. Ted Masselink, Vas P. Kunets, G.J. Salamo

Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers

A.J. Keating, J. Antoszewski, K.K.M.B.D. Silva, K.J. Winchester, T. Nguyen, J.M. Dell, C.A. Musca, L. Faraone, P. Mitra, J.D. Beck, M.R. Skokan, J.E. Robinson

Ionic Electrodeposition Simulation of CdTe Thin Films

Herng-Yih Ueng, Shu-Ying Yang, Jung-Chuan Chou

Effect of Microstructural Development on Mechanical and Electrical Properties of Inkjet-Printed Ag Films

Inyoung Kim, Young Ah Song, Hyun Chul Jung, Jea Woo Joung, Sung-Soo Ryu, Jongryoul Kim

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