Ausgabe 5/2010
Special Issue: Group III Nitrides, Silicon Carbide, and Zinc Oxide
Inhalt (27 Artikel)
Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity
Hee Jin Kim, Suk Choi, Dongwon Yoo, Jae-Hyun Ryou, Michael E. Hawkridge, Zuzanna Liliental-Weber, Russell D. Dupuis
High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy
Daniel Billingsley, Walter Henderson, W. Alan Doolittle
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
T.J. Anderson, M.J. Tadjer, M.A. Mastro, J.K. Hite, K.D. Hobart, C.R. Eddy, F.J. Kub
Magnetron Sputter Epitaxy and Characterization of Wurtzite AlInN on Si(111) Substrates
Qifeng Han, Chenghong Duan, Guoping Du, Wangzhou Shi, Lechun Ji
Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation
Liang Pang, Hui-Chan Seo, Patrick Chapman, Ilesanmi Adesida, Kyekyoon (Kevin) Kim
Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates
J. A. Grenko, C. L. Reynolds Jr., D. W. Barlage, M. A. L. Johnson, S. E. Lappi, C. W. Ebert, E. A. Preble, T. Paskova, K. R. Evans
Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
Marko J. Tadjer, Robert E. Stahlbush, Karl D. Hobart, Patrick J. McMarr, Hap L. Hughes, Eugene A. Imhoff, Fritz J. Kub, Sarah K. Haney, Anant Agarwal
MOS Characteristics of C-Face 4H-SiC
Z. Chen, A.C. Ahyi, X. Zhu, M. Li, T. Isaacs-Smith, J.R. Williams, L.C. Feldman
Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield
Jianmin Hao, Lijie Wang, Bin Feng, Xiangquan Wang, Ying Hong, Hua Wu, Dalei Meng, Junmin Guo, Ruyue Yan
Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon Method
Hrishikesh Das, Bharat Krishnan, Siva Prasad Kotamraju, Yaroslav Koshka
Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC
M. Li, A. C. Ahyi, X. Zhu, Z. Chen, T. Isaacs-Smith, J. R. Williams, J. Crofton
Multiple Magnetic States of Silicon Carbide Diluted Magnetic Semiconductors
Andrei Los, Victor Los, Andrei Timoshevskii
Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors
Dalong Zhao, Devin A. Mourey, Thomas N. Jackson
Dielectric Passivation of ZnO-Based Schottky Diodes
H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Dual-Gate Multiple-Channel ZnO Nanowire Transistors
Dong-Joo Kim, Jung-Hwan Hyung, Deok-Won Seo, Duk-Il Suh, Sang-Kwon Lee
Effect of Post-Deposition Processing on ZnO Thin Films and Devices
Tingfang Yen, Alan Haungs, Sung Jin Kim, Alexander Cartwright, Wayne A. Anderson
Identification of a Deep Acceptor Level in ZnO Due to Silver Doping
J. Chai, R. J. Mendelsberg, R. J. Reeves, J. Kennedy, H. von Wenckstern, M. Schmidt, M. Grundmann, K. Doyle, T. H. Myers, S. M. Durbin
The E3 Defect in Mg x Zn1−x O
H. von Wenckstern, K. Brachwitz, M. Schmidt, C. P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann
Zinc Oxysulfide Thin Films Grown by Pulsed Laser Deposition
Sundeep H. Deulkar, Jow-Lay Huang, Michael Neumann-Spallart
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. I. Belogorokhov, D. P. Norton, H. S. Kim, S. J. Pearton
Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates
Tammy Ben-Yaacov, Tommy Ive, Chris G. Van de Walle, Umesh K. Mishra, James S. Speck, Steven P. Denbaars
Low-Temperature Preparation of Undoped ZnO Films with High Transparency and Conductivity by Ion Beam Deposition
Jung-Hsiung Shen, Sung-Wei Yeh, Hsing-Lu Huang, Dershin Gan, New-Jin Ho