Ausgabe 6/1999
Inhalt (48 Artikel)
Prospects of uncooled HgCdTe detector technology
W. E. Tennant, S. Cabelli, K. Spariosu
MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K
P. Mitra, F. C. Case, M. B. Reine, T. Parodos, S. P. Tobin, P. W. Norton
Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K
S. P. Tobin, M. H. Weiler, M. A. Hutchins, T. Parodos, P. W. Norton
Junction depth measurement in HgCdTe using laser beam induced current (LBIC)
C. A. Musca, D. A. Redfern, E. P. G. Smith, J. M. Dell, L. Faraone, J. Bajaj
Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors
A. I. D’Souza, P. S. Wijewarnasuriya, R. E. Dewames, G. Hildebrandt, J. Bajaj, D. D. Edwall, J. G. Pasko, J. M. Arias
Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays
C. A. Musca, J. M. Dell, L. Faraone, J. Bajaj, T. Pepper, K. Spariosu, J. Blackwell, C. Bruce
Improved operability in Hg1−xCdxTe detector arrays
M. A. Hutchins, F. T. J. Smith, S. P. Tobin, P. W. Norton
Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes
Antoni Rogalski, Robert Ciupa
Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe
P. Capper, C. D. Maxey, C. L. Jones, J. E. Gower, E. S. O’Keefe, D. Shaw
Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance
P. S. Wijewarnasuriya, M. Zandian, D. B. Young, J. Waldrop, D. D. Edwall, W. V. Mclevige, D. Lee, J. Arias, A. I. D’Souza
The effects of short-range order and natural microinhomogeneities on the FIR optical properties of CdxHg1−xTe
M. I. Vasilevskiy, A. I. Belogorokhov, M. J. M. Gomes
New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys
C. Chauvet, V. Bousquet, E. Tournié, J. P. Faurie
Study of CdSSe:V and CdMnTe:V photorefractive effect
K. Chattopadhyay, K. M. Pour, S. U. Egarievwe, J. O. Ndap, H. Chen, X. Ma, S. Morgan, A. Burger
VUV-ellipsometry on BexZn1−xSe and BeTe
K. Wilmers, T. Wethkamp, N. Esser, C. Cobet, W. Richter, V. Wagner, H. Lugauer, F. Fischer, T. Gerhard, M. Keim, M. Cardona
Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe:Cr2+
C. I. Rablau, J. -O. Ndap, X. Ma, A. Burger, N. C. Giles
Analysis of CZT crystals and detectors grown in russia and the ukraine by high-pressure bridgman methods
H. Hermon, M. Schieber, R. B. James, E. Y. Lee, N. Yang, A. J. Antolak, D. H. Morse, C. Hackett, E. Tarver, N. N. P. Kolesnikov, Yu N. Ivanov, V. Komar, M. S. Goorsky, H. Yoon
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications
N. Lovergine, P. Prete, A. Cola, M. Mazzer, D. Cannoletta, A. M. Mancini
Development of dry processing techniques for CdZnTe surface passivation
M. J. Mescher, T. E. Schlesinger, J. E. Toney, B. A. Brunett, R. B. James
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress
T. J. de Lyon, J. E. Jensen, M. D. Gorwitz, C. A. Cockrum, S. M. Johnson, G. M. Venzor
Insights into MOCVD process control as revealed by laser interferometry
A. Stafford, S. J. C. Irvine, K. L. Hess, J. Bajaj
CdZnTe substrate producibility and its impact on IRFPA yield
Sanghamitra Sen, Herbert L. Hettich, David R. Rhiger, Stephen L. Price, Malcolm C. Currie, Robert P. Ginn, Eugene O. McLean
Cadmium zinc telluride substrate growth, characterization, and evaluation
M. Kestigian, A. B. Bollong, J. J. Derby, H. L. Glass, K. Harris, H. L. Hettich, P. K. Liao, P. Mitra, P. W. Norton, H. Wadley
Microstructural development of directionally solidified Hg1−xZnxSe alloys
S. D. Cobb, F. R. Szofran, K. S. Jones, S. L. Lehoczky
Initial evaluation of a valved Te source for MBE growth of HgCdTe
D. D. Edwall, D. B. Young, A. C. Chen, M. Zandian, J. M. Arias, Brian Dlugosch, Scott Priddy
In-Situ monitoring of temperature and alloy composition of Hg1−xCdxTe using FTIR spectroscopic techniques
M. Daraselia, C. H. Grein, S. Rujirawat, B. Yang, S. Sivananthan, F. Aqariden, H. D. Shih
Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE
G. L. Olson, J. A. Roth, P. D. Brewer, R. D. Rajavel, D. M. Jamba, J. E. Jensen, B. Johs
Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe
F. Aqariden, W. M. Duncan, H. D. Shih, L. A. Almeida, M. J. Bevan
Optical properties of Cd0.9Zn0.1 Te studied by variable angle spectroscopic ellipsometry between 0.75 and 6.24 eV
H. W. Yao, J. C. Erickson, H. B. Barber, R. B. James, H. Hermon
Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements
E. Y. Lee, R. B. James, R. W. Olsen, H. Hermon
Laser ablation sampling for induction coupled plasma source quadrupole mass spectrometry of Cd-Zn-Te materials
Colin Hackett, Haim Hermon, Eilene Cross, Patrick Doty, Edward Tarver, Ralph James
Effect of compositional disorder on the optical properties of Cd1−xZnxTe
K. Suzuki, S. Seto, K. Imai, T. Sawada, U. Neukirch, J. Gutowski
Arsenic incorporation in MBE grown Hg1−xCdxTe
C. H. Grein, J. W. Garland, S. Sivananthan, P. S. Wijewarnasuriya, F. Aqariden, M. Fuchs
New techniques in SIMS analysis of HgCdTe materials
Larry Wang, Lily H. Zhang, Jun Li
Can studies of the II-VIs profit from the use of synchrotron radiation and the DOE financial support thereof?
William E. Spicer, Alberto Herrera-Gômez, Piero Pianetta
X-ray photoelectron spectroscopy study of oxide and Te overlayers on as-grown and etched HgCdTe
L. S. Hirsch, R. Haakenaasen, T. Colin, K. S. Ziemer, C. D. Stinespring, S. Lovold, T. H. Myers
Use of electron cyclotron resonance plasmas to prepare CdZnTe (211)B substrates for HgCdTe molecular beam epitaxy
J. N. Johnson, L. A. Almeida, M. Martinka, J. D. Benson, J. H. Dinan
Optimization of dry etch process conditions for HgCdTe detector arrays
Peter O’Dette, Gary Tarnowski, Vincent Lukach, Martha Krueger, Paul Lovecchio
Valence band offset in HgTe/Hg1−xCdxTe superlattices
C. R. Becker, V. Latussek, M. Li, A. Pfeuffer-Jeschke, G. Landwehr
Surface second harmonic generation in the characterization of anodic sulphide and oxide films on Hg1−xCdxTe (MCT)
L. E. A. Berlouis, A. W. Wark, F. R. Cuickshank, D. Pugh, P. F. Brevet
Resistivity variation of semi-insulating Cd1−xZnx Te in relationship to alloy composition
H. Yoon, M. S. Goorsky, B. A. Brunett, J. M. Van Scyoc, J. C. Lund, R. B. James
Effect of electron transport properties on unipolar CdZnTe radiation detectors: LUND, spectrumplus and coplanar grid
E. Y. Lee, R. B. James
Interrelations between defects in the Hg1−xCdxTe epilayers and their measured lattice parameters and composition
N. Mainzer, E. Lakin, G. Bahir, E. Zolotoyabko
Dependency of p-n junction depth on ion species implanted in HgCdTe
H. Ebe, M. Tanaka, Y. Miyamoto
Improvement of nonlinearity and extension of wavelength region using tandem (PV+PC) type HgCdTe detector (Dual-MCT) in FTIR spectrometer
O. Abe, K. Kawasaki, M. Wakaki
Large volume imaging arrays for gamma-ray spectroscopy
T. E. Schlesinger, B. Brunett, H. Yao, J. M. Vanscyoc, R. B. James, S. U. Egarievwe, K. Chattopadhyay, X. -Y. Ma, A. Burger, N. Giles, U. El-Hanany, A. Shahar, A. Tsigelman