Ausgabe 7/2002
Inhalt (34 Artikel)
Transport properties of reactive-ion-etching-induced p-to-n type converted layers in HgCdTe
T. Nguyen, J. Antoszewski, C. A. Musca, D. A. Redfern, J. M. Dell, L. Faraone
Doping of molecular beam epitaxy HgCdTe using an arsenic cracker source (As2)
L. A. Almeida
Control of very-long-wavelength infrared HgCdTe detector-cutoff wavelength
J. D. Phillips, D. D. Edwall, D. L. Lee
Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays
L. A. Almeida, M. Thomas, W. Larsen, K. Spariosu, D. D. Edwall, J. D. Benson, W. Mason, A. J. Stoltz, J. H. Dinan
Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices
K. Jóźwikowski, A. Rogalski, A. Jóźwikowska
Passivation of HgCdTe p-n diode junction by compositionally graded HgCdTe formed by annealing in a Cd/Hg atmosphere
S. Y. An, J. S. Kim, D. W. Seo, S. H. Suh
HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures
T. J. De Lyon, G. L. Olson, J. A. Roth, J. E. Jensen, A. T. Hunter, M. D. Jack, S. L. Bailey
Low-temperature activation of As in Hg1−xCdxTe(211) grown on Si by molecular beam epitaxy
P. Boieriu, Y. Chen, V. Nathan
1/f noise in very-long-wavelength infrared Hg1−xCdx Te detectors
A. I. D’Souza, M. G. Stapelbroek, P. S. Wijewarnasuriya, R. E. Dewames, G. M. Williams
A discussion on the utilization of elemental transmutation for efficient p-type doping in HgCdTe and HgCdTeSe: Approach and methodology
T. D. Golding, C. L. Littler, J. H. Dinan
Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe
R. Haakenaasen, H. Steen, T. Lorentzen, L. Trosdahl-Iversen, A. D. Van Rheenen, H. Syversen
Activation of arsenic as an acceptor in Hg1−xCdxTe under equilibrium conditions
D. Chandra, H. F. Schaake, M. A. Kinch, F. Aqariden, C. F. Wan, D. F. Weirauch, H. D. Shih
A comparative study and performance characteristics of ion-implanted and heterojunction short-wave infrared HgCdTe focal-plane arrays
S. Terterian, M. Chu, S. Mesropian, H. K. Gurgenian, M. Ngo, C. C. Wang
Advances in large-area Hg1−xCdxTe photovoltaic detectors for remote-sensing applications
P. S. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. E. Dewames, G. Hildebrandt, J. Bajaj, J. M. Arias, A. I. D’Souza, F. Moore
Suppression of strain-induced cross-hatch on molecular beam epitaxy (211)B HgCdTe
M. Martinka, L. A. Almeida, J. D. Benson, J. H. Dinan
Formation and propagation of p-n junction in p-(HgCd)Te caused by dry etching
E. Belas, R. Grill, J. Franc, H. Sitter, P. Moravec, P. Höschl, A. L. Toth
Passivation effects on reactive-ion-etch-formed n-on-p junctions in HgCdTe
J. K. White, J. Antoszewski, R. Pal, C. A. Musca, J. M. Dell, L. Faraone, J. Piotrowski
Development of a high-selectivity process for electron cyclotron resonance plasma etching of II-VI semiconductors
A. J. Stoltz, J. D. Benson, M. thomas, P. R. Boyd, M. Martinka, J. H. Dinan
Band anticrossing in highly mismatched group II-VI semiconductor alloys
K. M. Yu, J. Wu, W. Walukiewicz, J. W. Beeman, J. W. Ager, E. E. Haller, I. Miotkowski, A. Ramdas
Heavy Cr doping of ZnSe by molecular beam epitaxy
B. L. Vanmil, A. J. Ptak, L. Bai, Lijun Wang, M. Chirila, N. C. Giles, T. H. Myers, Larry Wang
Visible emission from ZnO doped with rare-earth ions
W. M. Jadwisienczak, H. J. Lozykowski, A. Xu, B. Patel
Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy
K. Yasuda, Y. Tomita, Y. Masuda, T. Ishiguro, Y. Kawauchi, H. Morishita, Y. Agata
Growth of undoped and chromium-doped CdSxSe1−x crystals by the physical vapor transport method
U. N. Roy, Y. Cui, C. Barnett, K. -T. Chen, A. Burger, Jonathan T. Goldstein
Growth of Cr- and Co-doped CdSe crystals from high-temperature selenium solutions
O. O. Adetunji, N. Roy, Y. Cui, G. Wright, J. -O. Ndap, A. Burger
Heavily p-type doped ZnSe using Te and N codoping
Y. Gu, Igor L. Kuskovsky, G. F. Neumark, W. Lin, S. P. Guo, O. Maksimov, M. C. Tamargo
Infrared spectroscopy of chromium-doped cadmium selenide
J. -O. Ndap, C. I. Rablau, K. Morrow, O. O. Adetunji, V. A. Johnson, K. Chattopadhyay, R. H. Page, A. Burger
Observation of lasing from Cr2+:CdTe and compositional effects in Cr2+-doped II-VI semiconductors
A. G. Bluiett, U. Hömmerich, R. T. Shah, S. B. Trivedi, S. W. Kutcher, C. C. Wang
Nonalloyed Al ohmic contacts to MgxZn1−xO
H. Sheng, N. W. Emanetoglu, S. Muthukumar, S. Feng, Y. Lu
Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substrates
J. B. Varesi, A. A. Buell, R. E. Bornfreund, W. A. Radford, J. M. Peterson, K. D. Maranowski, S. M. Johnson, D. F. King
Effect of photoresist-feature geometry on electron-cyclotron resonance plasma-etch reticulation of HgCdTe diodes
J. D. Benson, A. J. Stoltz, A. W. Kaleczyc, M. Martinka, L. A. Almeida, P. R. Boyd, J. H. Dinan
Stacking-fault formation and propagation in 4H-SiC PiN diodes
R. E. Stahlbush, M. Fatemi, J. B. Fedison, S. D. Arthur, L. B. Rowland, S. Wang