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Erschienen in:
2008 | OriginalPaper | Buchkapitel
Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors
verfasst von : O. Ambacher, V. Cimalla
Erschienen in: Polarization Effects in Semiconductors
Verlag: Springer US
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The macroscopic non-linear pyroelectric polarization of wurtzite AlxGa1-xN, InxGa1xN and AlxIn1-xN ternary compounds dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GaN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heterointerfaces. In modeling of polarization induced effects in GaN based devices it is often assumed that polarization in group-III-nitride alloys interpolates linearly between the limiting values determined by the binary compounds.