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2012 | OriginalPaper | Buchkapitel

9. Electrostatic Force Microscopy Characterization of Low Dimensional Systems

verfasst von : Yoichi Miyahara, Lynda Cockins, Peter Grütter

Erschienen in: Kelvin Probe Force Microscopy

Verlag: Springer Berlin Heidelberg

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Abstract

The electrostatic potential profile is of great importance in nanoscale electronic devices. The effect of the random potential caused by dopants or other defects becomes an increasingly more important problem as device size continues to shrink and as devices exploiting quantum effects emerge. We review the past studies on the potential profile in semiconductor heterostructures by Kelvin probe force microscopy (KPFM) and electrostatic force microscopy (EFM), focusing on the technical aspects of the experiments. We then describe measurements of the spatial and temporal fluctuations of the electrostatic potential in an InP/InGaAs heterostructure sample by EFM and KPFM using frequency modulation mode atomic force microscopy (AFM). We also describe a new EFM technique capable of detecting charge with single-electron resolution and show that such techniques can be used for quantitative spectroscopic measurements of discrete electronic states such as those in quantum dots. Finally, we compare EFM and KPFM with two non-AFM-based scanning probe techniques with highly sensitive potentiometry and electrometry capability.

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Titel: Electrostatic Force Microscopy Characterization of Low Dimensional Systems
verfasst von: Yoichi Miyahara
Lynda Cockins
Peter Grütter
Verlag: Springer Berlin Heidelberg
Buch: Kelvin Probe Force Microscopy
Print ISBN: 978-3-642-22565-9

Electronic ISBN: 978-3-642-22566-6

Copyright-Jahr: 2012
DOI: https://doi.org/10.1007/978-3-642-22566-6_9

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