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Erschienen in:
2001 | OriginalPaper | Buchkapitel
Modelling of High-Voltage SOI-LDMOS Transistors including Self-Heating
verfasst von : W. J. Kloosterman, M. J. Swanenberg
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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This paper presents (i) the compact modelling and (ii) the parameter extraction strategy of a 12 V SOI-LDMOS transistor. The LDMOS transistor is characterized by a macro model consisting of the physics based Philips’ MOS Model 9 (MM9) for the channel and MOS Model 31 (MM31) for the drift region. Incorporation of the effect of self-heating during parameter extraction shows that the DC-characteristics can be described consistently and accurately over a wide range of biases, temperatures and device dimensions.