Effect of SmFe and TbFe film thickness on magnetostriction for MEMS devices

Excerpt

In this study, silicon based magnetostrictive structures were fabricated and finite element models using beam elements and plate elements were developed in order to access the effects of the thickness of deposited SmFe and TbFe, respectively, on magnetostriction in micro-devices. With expanded interest in micro-electro-mechanical systems (MEMS), numerous types of magnetostrictive material systems have been exhibited as micro devices. Some recent developments surrounding magnetostrictive micro-applications include physical, chemical and biological sensors, valves, micro-pumps, sound transducers, etc. [1‐3]. Magnetostrictive devices show potential for high power, permanent and wireless actuators. Rare-earth magnets containing TbFe and SmFe produce large magnetostrictions under low magnetic fields, an important characteristic for MEMS. To design MEMS devices using magnetostrictive materials, magnetostrictions should be analyzed. The present study attempts to resolve the problems encountered in the finite element modeling of magnetostrictive thin film structures having large aspect ratios. …