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Journal of Sol-Gel Science and Technology
Erschienen in: Journal of Sol-Gel Science and Technology 2/2010

01.02.2010 | Original Paper

Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric films

verfasst von: Xihong Hao, Jiwei Zhai, Fen Zhou, Xiwen Song, Shengli An

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 2/2010

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Abstract

(Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT 2/95/5) antiferroelectric films with (100) preferred orientation were successfully prepared on Pt-buffered silicon substrates via the sol-gel method. SEM results indicated that PLZT 2/95/5 antiferroelectric films with a thickness over 1,000 nm showed a crack surface. Also, it was found that, as the increase of the thickness, the field-induced strains were decreased gradually. Moreover, the frequency-dependent field-induced strains illustrated that the typical strains-electric field (S-E) curves with the maximum values could be obtained at a lower measurement frequency <500 Hz.
Vorheriger Artikel Synthesis of magnesium oxychloride nanorods with controllable morphology and their transformation to magnesium hydroxide nanorods via treatment with sodium hydroxide
Nächster Artikel Influence of Mn incorporation on the structural and optical properties of sol gel derived ZnO film

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Metadaten
Titel
Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric films
verfasst von
Xihong Hao
Jiwei Zhai
Fen Zhou
Xiwen Song
Shengli An
Publikationsdatum
01.02.2010
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 2/2010
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-009-2104-1

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