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01.12.2021

Numerical optimization of (FTO/ZnO/CdS/CH₃NH₃SnI₃/GaAs/Au) perovskite solar cell using solar capacitance simulator with efficiency above 23% predicted

verfasst von: Irfan Qasim, Owais Ahmad, Asim Rashid, Tashfeen Zehra, Muhammad Imran Malik, Muhammad Rashid, M. Waqar Ahmed, M. Farooq Nasir

Erschienen in: Optical and Quantum Electronics | Ausgabe 12/2021

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Abstract

The presented study deals with the investigations of the methyl ammonium tin halide (CH₃NH₃SnI₃) based perovskite solar cells for optimized device performance using solar capacitance simulations software. Several necessary parameters such as metal work functions, thickness of structural layers, charge carrier’s mobility and defect density have been explored to evaluate the device performance. Calculations reveal that for the best efficiency of device the maximum thickness of the perovskite (CH₃NH₃SnI₃) absorber layer must be 4.2 μm. The thickness values of 0.01 μm for ZnO electron transport layer (ETL), 0.871 μm for GaAs hole transport layer and 0.001 μm for CdS buffer layer have been found which proved to be optimum for maximum power conversion efficiency (PCE) of 23.80% for the device. The variation of open circuit voltage (V_oc), Short circuit current (J_sc), Fill Factor (FF %), quantum efficiency (QE) against thickness of all layers and interface defect densities in FTO/ZnO/CdS/CH₃NH₃SnI₃/GaAs/Au composition have been critically explored and their crucial role for the device performance has been reported. Heterojunctions between ZnO-ETL and CdS buffer layers have shown improved device performance and PCE. Current investigations may prove to be useful for designing and fabrication of climate friendly, non-toxic and highly efficient solar cells.

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Titel: Numerical optimization of (FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au) perovskite solar cell using solar capacitance simulator with efficiency above 23% predicted
verfasst von: Irfan Qasim
Owais Ahmad
Asim Rashid
Tashfeen Zehra
Muhammad Imran Malik
Muhammad Rashid
M. Waqar Ahmed
M. Farooq Nasir
Publikationsdatum: 01.12.2021
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 12/2021
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-021-03361-5

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