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Optical and Quantum Electronics

Erschienen in:

01.06.2023

New Sb₂Se₃-based solar cell for achieving high efficiency theoretical modeling

verfasst von: Abdelaziz Ait Abdelkadir, Mustapha Sahal, Essaadia Oublal, Naveen Kumar, Abdellah Benami

Erschienen in: Optical and Quantum Electronics | Ausgabe 6/2023

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Abstract

In this paper, we presented a numerical study of a CdS/Sb₂Se₃ mono junction solar cell (SC) using the SC Capacitive Simulator (SCAPS-1D). We validated an experimental work using a variety of Sb2Se3 experimental parameters, and the results showed excellent agreement between numerical and experimental J-V curves, yielding a PCE of 7.54%.To continue, we analyzed the impact of Sb₂Se₃ thin layer thickness, charge carrier concentration, bulk defect density, and interface defect (CdS/Sb₂Se₃) on solar cell characteristics. With the optimum Sb2Se3 layer thickness of 1.2 µm, carrier concentration of 10¹⁵ cm⁻³, bulk defect of 10¹³ cm⁻³, and CdS/Sb2Se3 interface defect densities of 10¹⁰ cm⁻², we were able to attain an efficiency of 16.62%, Jsc = 35.38 mA/cm², Voc = 0.66 V, and FF = 70.33%. Finally, we investigated the insertion effect of n-GaAs (ETL) and P⁺-CuO HTL (BSF) on Sb₂Se₃ solar cell efficiency. The novel ITO/n-CdS/n-GaAs/p-Sb₂Se₃/p⁺-CuO HTL/Au heterostructure achieved a huge efficiency of 19.60%.

Vorheriger Artikel Assessment of performance based on structure, dielectric and linear/nonlinear optical properties of PVA/CMC/PVP blends loaded with ZnS/Co

Nächster Artikel Engineering the temporal shape of a chirped pulse compressed in a pressure-gradient-based cascaded hollow-core photonic crystal fiber

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Titel: New Sb2Se3-based solar cell for achieving high efficiency theoretical modeling
verfasst von: Abdelaziz Ait Abdelkadir
Mustapha Sahal
Essaadia Oublal
Naveen Kumar
Abdellah Benami
Publikationsdatum: 01.06.2023
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 6/2023
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-023-04797-7

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