Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Erschienen in:
Classical Device Modeling Kapitel lesen Erstes Kapitel lesen

2011 | OriginalPaper | Buchkapitel

5. Wigner Function Approach

verfasst von : M. Nedjalkov, D. Querlioz, P. Dollfus, H. Kosina

Erschienen in: Nano-Electronic Devices

Verlag: Springer New York

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

The Wigner function formalism has been introduced with an emphasis on basic theoretical aspects, and recently developed numerical approaches and applications for modeling and simulation of the transport of current carriers in electronic structures. Two alternative ways: the historical introduction of the function on top of the operator mechanics, and an independent formulation of the Wigner theory in phase space which then recovers the operator mechanics, demonstrate that the formalism provides an autonomous description of the quantum world.
The conditions of carrier transport in nano-electronic devices impose to extend this coherent physical picture by processes of interaction with the environment. Relevant becomes the Wigner–Boltzmann equation, derived for the case of interaction with phonons and impurities. The numerical aspects focus on two particle models developed to solve this equation. These models make the analogy between classical and Wigner transport pictures even closer: particles are merely classical, the only characteristics which carries the quantum information is a dimensionless quantity – affinity or sign.
The recent ground-breaking applications of the affinity method for simulation of typical nano-devices as the resonant tunneling diode and the ultra-short DG-MOSFET firmly establish the Wigner–Boltzmann equation as a bridge between coherent and semi-classical transport pictures. It became a basic route to understand the nano-device operation as an interplay between coherent and de-coherence phenomena. The latter, due to the environment: phonon field, contacts or defects, attempts to recover the classical transport picture.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Vorheriges Kapitel Quantum Master Equations in Electronic Transport
Nächstes Kapitel Simulating Transport in Nanodevices Using the Usuki Method
Literatur
1.
H. Weyl, “Quantenmechanik und Gruppentheorie,” Zeitschrift fr Physik, vol. 46, pp. 1–46, 1927.CrossRef
2.
E. Wigner, “On the quantum corrections for thermodynamic equilibrium,” Physical Review, vol. 40, pp. 749–759, 1932.MATHCrossRef
3.
J. E. Moyal, “Quantum mechanics as a statistical theory,” Proceedings of the Cambridge Philosophical Society, vol. 45, pp. 99–124, 1949.MathSciNetMATHCrossRef
4.
V. I. Tatarskii, “The Wigner Representation of Quantum Mechanics,” Sov. Phys. Usp., vol. 26, pp. 311–327, 1983.MathSciNetCrossRef
5.
N. C. Dias and J. N. Prata, “Admissible states in quantum phase space,” Annals of Physics, vol. 313, pp. 110–146, 2004.MathSciNetMATHCrossRef
6.
D. K. Ferry, R. Akis, and J. P. Bird, “Einselection in action: decoherence and pointer states in open quantum dots,” Physical Review Letters, vol. 93, p. 026803, 2004.CrossRef
7.
I. Knezevic, “Decoherence due to contacts in ballistic nanostructures,” Physical Review B, vol. 77, p. 125301, 2008.CrossRef
8.
F. Buscemi, P. Bordone, and A. Bertoni, “Simulation of decoherence in 1D systems, a comparison between distinguishable- and indistinguishable-particle collisions,” Physica Status Solidi (c), vol. 5, pp. 139–142, 2008.
9.
F. Buscemi, E. Cancellieri, P. Bordone, A. Bertoni, and C.Jacoboni, “Electron decoherence in a semiconductor due to electron-phonon scattering,” Physica Status Solidi (c), vol. 5, pp. 52–55, 2008.
10.
D. Querlioz, J. Saint-Martin, A. Bournel, and P. Dollfus, “Wigner Monte Carlo simulation of phonon induced electron decoherence in semiconductor nanodevices,” Physical Review B, vol. 78, p. 165306, 2008.CrossRef
11.
R. Balescu, Equilibrium and Nonequilibrium Statistical Mechanics. Wiley and Sons, 1975.
12.
N. C. Kluksdahl, A. M. Kriman, D. K. Ferry, and C. Ringhofer, “Self-consistent study of resonant-tunneling diode,” Physical Review B, vol. 39, pp. 7720–7734, 1989.CrossRef
13.
A. Gehring and H. Kosina, “Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method,” Journal of Compuational Electronics, vol. 4, pp. 67–70, 2005.CrossRef
14.
P. Carruthers and F. Zachariasen, “Quantum Collision Theory with Phase-Space Distributions,” Rev.Mod.Phys., vol. 55, no. 1, pp. 245–285, 1983.
15.
B. Biegel and J. Plummer, “Comparison of self-consistency iteration options for the Wigner function method of quantum device simulation,” Physical Review B, vol. 54, pp. 8070–8082, 1996.CrossRef
16.
W. Frensley, “Wigner-Function Model of Resonant-Tunneling Semiconductor Device,” Physical Review B, vol. 36, no. 3, pp. 1570–1580, 1987.CrossRef
17.
W. Frensley, “Boundary conditions for open quantum systems driven far from equilibrium,” Reviews of Modern Physics, vol. 62, no. 3, pp. 745–789, 1990.CrossRef
18.
K. Gullapalli, D. Miller, and D. Neikirk, “Simulation of quantum transport in memory-switching double-barrier quantum-well diodes,” Physical Review B, vol. 49, pp. 2622–2628, 1994.CrossRef
19.
F. A. Buot and K. L. Jensen, “Lattice Weil-Wigner Formulation of Exact-Many Body Quantum-Transport Theory and Applications to Novel Solid-State Quantum-Based Devices,” Physical Review B, vol. 42, no. 15, pp. 9429–9457, 1990.CrossRef
20.
R. K. Mains and G. I. Haddad, “Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios,” Journal of Applied Physics, vol. 64, pp. 5041–5044, 1988.CrossRef
21.
D. Querlioz, H. N. Nguyen, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, and P. Dollfus, “Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport,” Journal of Computational Electronics, vol. 8, pp. 324–335, 2009.CrossRef
22.
M. Nedjalkov, “Wigner transport in presence of phonons: Particle models of the electron kinetics,” in From Nanostructures to Nanosensing Applications, Proceedings of the International School of Physics ‘Enrico Fermi’ (A. P. A. D’Amico, G. Balestrino, ed.), vol. 160, (Amsterdam), pp. 55–103, IOS Press, 2005.
23.
F. Rossi, C.Jacoboni, and M.Nedjalkov, “A Monte Carlo Solution of the Wigner Transport Equation,” Semiconductor Sci. Technology, vol. 9, pp. 934–936, 1994.CrossRef
24.
P. Bordone, M. Pascoli, R. Brunetti, A. Bertoni, and C. Jacoboni, “Quantum transport of electrons in open nanostructures with the Wigner-function formalism,” Physical Review B, vol. 59, no. 4, pp. 3060–3069, 1999.CrossRef
25.
I. Levinson, “Translational invariance in uniform fields and the equation for the density matrix in the Wigner representation,” Soviet Phys. JETP, vol. 30, no. 2, pp. 362–367, 1970.MathSciNet
26.
J. R. Barker and D. K. Ferry, “Self-Scattering Path-Variable Formulation of High Field, Time-Dependent Quantum Kinetic Equations for Semiconductor Transport in the Finite-Collision-Duration Regime,” Physical Review Letters, vol. 42, no. 26, pp. 1779–1781, 1979.CrossRef
27.
M. Nedjalkov, D. Vasileska, D. Ferry, C. Jacoboni, C. Ringhofer, I. Dimov, and V. Palankovski, “Wigner transport models of the electron-phonon kinetics in quantum wires,” Physical Review B, vol. 74, pp. 035311–1–035311–18, July 2006.
28.
J. Schilp, T. Kuhn, and G. Mahler, “Electron-phonon quantum kinetics in pulse-excited semiconductors: Memory and renormalization effects,” Physical Review B, vol. 50, no. 8, pp. 5435–5447, 1994.CrossRef
29.
C. Fuerst, A. Leitenstorfer, A. Laubereau, and R. Zimmermann, “Quantum Kinetic Electron-Phonon Interaction in GaAs: Energy Nonconserving Scattering Events and Memory Effects,” Physical Review Letters, vol. 78, pp. 3733–3736, 1997.CrossRef
30.
P. Bordone, D. Vasileska, and D. Ferry, “Collision-Duration Time for Optical-Phonon Emission in Semiconductors,” Physical Review B, vol. 53, no. 7, pp. 3846–3855, 1996.CrossRef
31.
T. Kuhn and F. Rossi, “Monte Carlo Simulation of Ultrafast Processes in Photoexcited Semiconductors: Coherent and Incoherent Dynamics,” Physical Review B, vol. 46, pp. 7496–7514, 1992.CrossRef
32.
F. Rossi and T. Kuhn, “Theory of Ultrafast Phenomena in Photoexcited Semiconductors,” Reviews of Modern Physics, vol. 74, pp. 895–950, July 2002.CrossRef
33.
K. Thornber, “High-field electronic conduction in insulators,” Solid-State Electron., vol. 21, pp. 259–266, 1978.CrossRef
34.
J. Barker and D. Ferry, “On the Physics and Modeling of Small Semiconductor Devices–I,” Solid-State Electron., vol. 23, pp. 519–530, 1980.CrossRef
35.
M. V. Fischetti, “Monte Carlo Solution to the Problem of High-Field Electron Heating in SiO 2,” Physical Review Letters, vol. 53, no. 3, p. 1755, 1984.
36.
C. Jacoboni, A. Bertoni, P. Bordone, and R. Brunetti, “Wigner-function Formulation for Quantum Transport in Semiconductors: Theory and Monte Carlo Approach,” Mathematics and Computers in Simulations, vol. 55, no. 1-3, pp. 67–78, 2001.MathSciNetMATHCrossRef
37.
P. Bordone, A. Bertoni, R. Brunetti, and C. Jacoboni, “Monte Carlo simulation of quantum electron transport based on Wigner paths,” Mathematics and Computers in Simulation, vol. 62, p. 307, 2003.MathSciNetMATHCrossRef
38.
P. Lipavski, F. Khan, F. Abdolsalami, and J. Wilkins, “High-Field Transport in Semiconductors. I. Absence of the Intra-Collisional Field Effect,” Physical Review B, vol. 43, no. 6, pp. 4885–4896, 1991.
39.
T. Gurov, M. Nedjalkov, P. Whitlock, H. Kosina, and S. Selberherr, “Femtosecond relaxation of hot electrons by phonon emission in presence of electric field,” Physica B, vol. 314, pp. 301–304, 2002.CrossRef
40.
M. Nedjalkov, D. Vasileska, E. Atanassov, and V. Palankovski, “Ultrafast Wigner Transport in Quantum Wires,” Journal of Computational Electronics, vol. 6, pp. 235–238, 2007.CrossRef
41.
C. Ringhofer, M. Nedjalkov, H. Kosina, and S. Selberherr, “Semi-Classical Approximation of Electron-Phonon Scattering beyond Fermi’s Golden Rule,” SIAM Journal of Applied Mathematics, vol. 64, pp. 1933–1953, 2004.MathSciNetMATHCrossRef
42.
M. Herbst, M. Glanemann, V. Axt, and T. Kuhn, “Electron-phonon quantum kinetics for spatially inhomogenenous excitations,” Phisical Review B, vol. 67, pp. 195305–1–195305–18, 2003.
43.
P. Bordone, A. Bertoni, R. Brunetti, and C. Jacoboni, “Monte Carlo Simulation of Quantum Electron Transport Based on Wigner Paths,” Mathematics and Computers in Simulation, vol. 62, pp. 307–314, 2003.MathSciNetMATHCrossRef
44.
R. Brunetti, C. Jacoboni, and F. Rossi, “Quantum theory of transient transport in semiconductors: A Monte Carlo approach,” Physical Review B, vol. 39, pp. 10781–10790, May 1989.CrossRef
45.
B. K. Ridley, Quantum processes in semiconductors. Oxford University Press, fourth ed., 1999.
46.
K.-Y. Kim and B. Lee, “On the high order numerical calculation schemes for the Wigner transport equation,” Solid-State Electronics, vol. 43, pp. 2243–2245, 1999.CrossRef
47.
Y. Yamada, H. Tsuchiya, and M. Ogawa, “Quantum Transport Simulation of Silicon-Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport Equation,” IEEE Trans. Electron Dev., vol. 56, pp. 1396–1401, 2009.CrossRef
48.
S. Barraud, “Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism,” Journal of Applied Physics, vol. 106, p. 063714, 2009.CrossRef
49.
H. Tsuchiya and U. Ravaioli, “Particle Monte Carlo Simulation of Quantum Phenomena in Semiconductor Devices,” J.Appl.Phys., vol. 89, pp. 4023–4029, April 2001.
50.
R. Sala, S. Brouard, and G. Muga, “Wigner Trajectories and Liouville’s theorem,” J. Chem. Phys., vol. 99, pp. 2708–2714, 1993.CrossRef
51.
P. Vitanov, M. Nedjalkov, C. Jacoboni, F. Rossi, and A. Abramo, “Unified Monte Carlo Approach to the Boltzmann and Wigner Equations,” in Advances in Parallel Algorithms (Bl. Sendov and I. Dimov, eds.), pp. 117–128, IOS Press, 1994.
52.
D. Ferry, R. Akis, and D. Vasileska, “Quantum Effect in MOSFETs: Use of an Effective Potential in 3D Monte Carlo Simulation of Ultra-Schort Channel Devices,” Int.Electron Devices Meeting, pp. 287–290, 2000.
53.
L. Shifren, R. Akis, and D. Ferry, “Correspondence Between Quantum and Classical Motion: Comparing Bohmian Mechanics with Smoothed Effective Potential Approach,” Phys.Lett.A, vol. 274, pp. 75–83, 2000.
54.
S. Ahmed, C. Ringhofer, and D. Vasileska, “An Effective Potential Aprroach to Modeling 25nm MOSFET Devices,” Journal of Computational Electronics, vol. 2, pp. 113–117, 2003.CrossRef
55.
C. Ringhofer, C. Gardner, and D. Vasileska, “An Effective Potentials and Quantum Fluid Models: A Thermodynamic Approach,” Journal of High Speed Electronics and Systems, vol. 13, pp. 771–801, 2003.CrossRef
56.
S. Haas, F. Rossi, and T. Kuhn, “Generalized Monte Carlo approach for the study of the coherent ultrafast carrier dynamics in photoexcited semiconductors,” Physical Review B, vol. 53, no. 12, pp. 12855–12868, 1996.CrossRef
57.
M. Nedjalkov, I. Dimov, F. Rossi, and C. Jacoboni, “Convergency of the Monte Carlo Algorithm for the Wigner Quantum Transport Equation,” Journal of Mathematical and Computer Modelling, vol. 23, no. 8/9, pp. 159–166, 1996.MathSciNetMATHCrossRef
58.
K. L. Jensen and F. A. Buot, “The Methodology of Simulating Particle Trajectories Trough Tunneling Structures Using a Wigner Distribution Approach,” IEEE Trans.Electron Devices, vol. 38, no. 10, pp. 2337–2347, 1991.CrossRef
59.
H. Tsuchiya and T. Miyoshi, “Simulation of Dynamic Particle Trajectories through Resonant-Tunneling Structures based upon Wigner Distribution Function,” Proc. 6th Int. Workshop on Computational Electronics IWCE6, Osaka, pp. 156–159, 1998.
60.
M. Pascoli, P. Bordone, R. Brunetti, and C. Jacoboni, “Wigner Paths for Electrons Interacting with Phonons,” Physical Review B, vol. B 58, pp. 3503–3506, 1998.CrossRef
61.
V. Sverdlov, A. Gehring, H. Kosina, and S. Selberherr, “Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach,” Solid-State Electronics, vol. 49, pp. 1510–1515, 2005.CrossRef
62.
D. Querlioz, J. Saint-Martin, V. N. Do, A. Bournel, and P. Dollfus, “A Study of Quantum Transport in End-of-Roadmap DG-MOSFETs Using a Fully Self-Consistent Wigner Monte Carlo Approach,” IEEE Trans. Nanotechnology, vol. 5, pp. 737–744, 2006.CrossRef
63.
D. Querlioz, J. Saint-Martin, V. N. Do, A. Bournel, and P. Dollfus, “Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach,” Int. Electron Device Meeting Tech. Dig. (IEDM), pp. 941–944, 2006.
64.
L. Shifren and D. K. Ferry, “A Wigner function based ensemble Monte Carlo approach for accurate incorporation of quantum effects in device simulation,” Journal of Computational Electronics, vol. 1, pp. 55–58, 2002.CrossRef
65.
D. Querlioz, P. Dollfus, V. N. Do, A. Bournel, and V. L. Nguyen, “An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs,” Journal of Computational Electronics, vol. 5, pp. 443–446, 2006.CrossRef
66.
D. Querlioz and P. Dollfus, The Wigner Monte Carlo Method for Nanoelectronic Devices - A particle description of quantum transport and decoherence. ISTE-Wiley, 2010.
67.
M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. K. Ferry, “Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices,” Physical Review B, vol. 70, p. 115319, 2004.CrossRef
68.
A. Bertoni, P. Bordone, G. Ferrari, N. Giacobbi, and C. Jacoboni, “Proximity effect of the contacts on electron transport in mesoscopic devices,” Journal of Computational Electronics, vol. 2, pp. 137–140, 2003.CrossRef
69.
C. Jacoboni and L. Reggiani, “The Monte Carlo Method for the Solution of Charge Transport in Semiconductors with Applications to Covalent Materials,” Rev.Mod.Phys., vol. 55, no. 3, pp. 645–705, 1983.
70.
H. Kosina, “Wigner function approach to nano device simulation,” International Journal of Computational Science and Engineering, vol. 2, no. 3/4, pp. 100 – 118, 2006.CrossRef
71.
S. Ermakow, Die Monte-Carlo-Methode und verwandte Fragen. München, Wien: R. Oldenburg Verlag, 1975.MATH
72.
J. Hammersley and D. Handscomb, Monte Carlo Methods. New York: John Wiley, 1964.MATH
73.
H. Kosina and M. Nedjalkov, Handbook of Theoretical and Computational Nanotechnology, vol. 10, ch. Wigner Function Based Device Modeling, pp. 731–763. Los Angeles: American Scientific Publishers, 2006.
74.
M. Nedjalkov, R. Kosik, H. Kosina, and S. Selberherr, “Wigner Transport Through Tunneling Structures - Scattering Interpretation of the Potential Operator,” in Proc. Simulation of Semiconductor Processes and Devices, (Kobe, Japan), pp. 187–190, Publication Office Business Center for Academic Societies Japan, 2002.
75.
H. Kosina, M. Nedjalkov, and S. Selberherr, “A Monte Carlo Method Seamlessly Linking Classical and Quantum Transport Calculations,” Journal of Compuational Electronics, vol. 2, no. 2-4, pp. 147–151, 2003.CrossRef
76.
H. Kosina, V. Sverdlov, and T. Grasser, “Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications,” in Proc. Simulation of Semiconductor Processes and Devices, (Monterey, CA, USA), pp. 357–360, Institute of Electrical and Electronics Engineers, Inc., Sept. 2006.
77.
R. Tsu and L. Esaki, “Tunneling in a finite superlattice,” Appl. Phys. Lett., vol. 22, pp. 562–564, 1973.CrossRef
78.
L. L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Appl. Phys. Lett., vol. 24, pp. 593–595, 1974.CrossRef
79.
T. J. Shewchuk, P. C. Chapin, P. D. Coleman, W. Kopp, R. Fischer, and H. Morkoç, “Resonant Tunneling Oscillations in a GaAs-AlxGa1-xAs Heterostructure at Room-Temperature,” Appl. Phys. Lett., vol. 46, pp. 508–510, 1985.CrossRef
80.
H. Mizuta and T. Tanoue, The physics and applications of resonant tunnelling diodes. Cambridge University Press, 1995.
81.
G. Iannaccone, G. Lombardi, M. Macucci, and B. Pellegrini, “Enhanced Shot Noise in Resonant Tunneling: Theory and Experiment,” Phys. Rev. Lett., vol. 80, pp. 1054–1057, 1998.CrossRef
82.
Y. M. Blanter and M. Büttiker, “Transition from sub-Poissonian to super-Poissonian shot noise in resonant quantum wells,” Phys. Rev. B, vol. 59, pp. 10217–10226, 1999.CrossRef
83.
W. Song, E. E. Mendez, V. Kuznetsov, and B. Nielsen, “Shot noise in negative-differential-conductance devices,” Appl. Phys. Lett., vol. 82, pp. 1568–1570, 2003.CrossRef
84.
S. S. Safonov, A. K. Savchenko, D. A. Bagrets, O. N. Jouravlev, Y. V. Nazarov, E. H. Linfield, and D. A. Ritchie., “Transition from sub-Poissonian to super-Poissonian shot noise in resonant quantum wells,” Phys. Rev. Lett., vol. 91, p. 136801, 2003.
85.
X. Oriols, A. Trois, and G. Blouin, “Self-consistent simulation of quantum shot noise in nanoscale electron devices,” Appl. Phys. Lett., vol. 85, pp. 3596–3598, 2004.CrossRef
86.
V. Y. Aleshkin, L. Reggiani, N. V. Alkeev, V. E. Lyubchenko, C. N. Ironside, J. M. L. Figueiredo, and C. R. Stanley, “Coherent approach to transport and noise in double-barrier resonant diodes,” Phys. Rev. B, vol. 70, p. 115321, 2004.CrossRef
87.
V. N. Do, P. Dollfus, and V. L. Nguyen, “Transport and noise in resonant tunneling diode using self-consistent Green’s function calculation,” J. Appl. Phys., vol. 100, p. 093705, 2006.CrossRef
88.
T. J. Park, Y. K. Lee, S. K. Kwon, J. H. Kwon, and J. Jang, “Resonant tunneling diode made of organic semiconductor superlattice,” Appl. Phys. Lett., vol. 89, p. 151114, 2006.CrossRef
89.
T. Kanazawa, R. Fujii, T. Wada, Y. Suzuki, M. Watanabe, and M. Asada, “Room temperature negative differential resistance of CdF2/CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates,” Appl. Phys. Lett., vol. 90, p. 092101, 2007.CrossRef
90.
M. V. Petrychuk, A. E. Belyaev, A. M.Kurakin, S. V. Danylyuk, N. Klein, and S. A. Vitusevich, “Mechanisms of current formation in resonant tunneling AlN/GaN heterostructures,” Appl. Phys. Lett., vol. 91, p. 222112, 2007.CrossRef
91.
J.-P. Colinge, “Multiple-gate SOI MOSFETs,” Solid-State Electronics, vol. 48, pp. 897–905, 2004.CrossRef
92.
J. Saint-Martin, A. Bournel, and P. Dollfus, “Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation,” Solid-State Electronics, vol. 50, pp. 94–101, 2006.CrossRef
93.
94.
D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, and H. S. P. Wong, “Device scaling limits of Si MOSFETs and their application dependencies,” Proc. IEEE, vol. 89, pp. 259–288, 2001.CrossRef
95.
P. Dollfus, A. Bournel, S. Galdin, S. Barraud, and P. Hesto, “Effect of discrete impurities on electron transport in ultrashort MOSFET using 3-D MC simulation,” IEEE Trans. Electron Devices, vol. 51, pp. 749–756, 2004.CrossRef
96.
T. Skotnicki, “Materials and device structures for sub-32 nm CMOS nodes,” Microelectronic Engineering, vol. 84, pp. 1845–1852, 2007.CrossRef
97.
D. Reid, C. Millar, G. Roy, S. Roy, and A. Asenov, “Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study,” IEEE Trans. Electron Devices, vol. 56, pp. 2255–2263, 2009.CrossRef
98.
J. Widiez, J. Lolivier, M. Vinet, T. Poiroux, B. Previtali, F. Daugé, M. Mouis, and S. Deleonibus, “Experimental evaluation of gate architecture influence on DG SOI MOSFETs performance,” IEEE Trans. Electron Devices, vol. 52, pp. 1772–1779, 2005.CrossRef
99.
M. Vinet, T. Poiroux, J. Widiez, J. Lolivier, B. Previtali, C. Vizioz, B. Guillaumot, Y. L. Tiec, P. Besson, B. Biasse, F. Allain, M. Casse, D. Lafond, J.-M. Hartmann, Y. Morand, J. Chiaroni, and S. Deleonibus, “Bonded planar double-metal-gate NMOS transistors down to 10 nm,” IEEE Electron Device Lett., vol. 26, pp. 317–319, 2005.CrossRef
100.
J. Widiez, T. Poiroux, M. Vinet, M. Mouis, and S. Deleonibus, “Experimental comparison between Sub-0.1-μm ultrathin SOI single- and double-gate MOSFETs: Performance and Mobility,” IEEE Trans. Nanotechnol., vol. 5, pp. 643–648, 2006.CrossRef
101.
V. Barral, T. Poiroux, M. Vinet, J. Widiez, B. Previtali, P. Grosgeorges, G. L. Carval, S. Barraud, J.-L. Autran, D. Munteanu, and S. Deleonibus, “Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate Double-Gate transistors,” Solid-State Electronics, vol. 51, pp. 537–542, 2007.CrossRef
102.
J. Saint-Martin, A. Bournel, V. Aubry-Fortuna, F. Monsef, C. Chassat, and P. Dollfus, “Monte Carlo simulation of double gate MOSFET including multi sub-band description,” J. Computational Electronics, vol. 5, pp. 439–442, 2006.CrossRef
103.
A. Bournel, V. Aubry-Fortuna, J. Saint-Martin, and P. Dollfus, “Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation,” Solid-State Electronics, vol. 51, pp. 543–550, 2007.CrossRef
104.
M. Vinet, T. Poiroux, C. Licitra, J. Widiez, J. Bhandari, B. Previtali, C. Vizioz, D. Lafond, C. Arvet, P. Besson, L. Baud, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, and S. Deleonibus, “Self-aligned planar double-gate MOSFETs by bonding for 22-nm node, with metal gates, high-κ dielectrics, and metallic source/drain,” IEEE Electron Device Lett., vol. 30, pp. 748–750, 2009.CrossRef
105.
E. Joos, Decoherence and the Appearance of a Classical World in Quantum Theory. Springer-Verlag, 2003.
106.
D. Querlioz, “Phnomnes quantiques et dcohrence dans les nano-dispositifs semiconducteurs : tude par une approche Wigner Monte Carlo,” PhD Dissertation, Univ. Paris-Sud, Orsay, 2008.
107.
M. V. Fischetti and S. E. Laux, “Monte Carlo study of electron transport in silicon inversion layers,” Phys. Rev. B, vol. 48, pp. 2244–2274, 1993.CrossRef
108.
J. Saint-Martin, A. Bournel, F. Monsef, C. Chassat, and P. Dollfus, “Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas,” Semicond. Sci. Techn., vol. 21, pp. L29–L31, 2006.CrossRef
109.
L. Lucci, P. Palestri, D. Esseni, L. Bergagnini, and L. Selmi, “Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs,” IEEE Trans. Electron Devices, vol. 54, pp. 1156–1164, 2007.CrossRef
110.
D. Querlioz, J. Saint-Martin, K. Huet, A. Bournel, V. Aubry-Fortuna, C. Chassat, S. Galdin-Retailleau, and P. Dollfus, “On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation,” IEEE Trans. Electron Devices, vol. 54, pp. 2232–2242, 2007.CrossRef
111.
F. Monsef, P. Dollfus, S. Galdin-Retailleau, H. J. Herzog, and T. Hackbarth, “Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation,” J. Appl. Phys., vol. 95, pp. 3587–3593, 2004.CrossRef
112.
S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, “Surface roughness at the Si(100)-SiO2 interface,” Phys. Rev. B, vol. 32, pp. 8171–8186, 1985.CrossRef
113.
H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue, “Interface roughness scattering in GaAs/AlAs quantum wells,” Appl. Phys. Lett., vol. 51, pp. 1934–1936, 1987.CrossRef
114.
D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, “Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs,” IEEE Trans. Electron Devices, vol. 50, pp. 2445–2455, 2003.CrossRef
115.
V. N. Do, “Modelling and simulation of quantum electronic transport in semiconductor nanometer devices,” PhD Dissertation, Univ. Paris-Sud, Orsay, 2007.
116.
J. Saint-Martin, A. Bournel, and P. Dollfus, “On the ballistic transport in nanometer-scaled DG MOSFETs,” IEEE Trans. Electron Devices, vol. 51, pp. 1148–1155, 2004.CrossRef
Metadaten
Titel
Wigner Function Approach
verfasst von
M. Nedjalkov
D. Querlioz
P. Dollfus
H. Kosina
Copyright-Jahr
2011
Verlag
Springer New York
Buch
Nano-Electronic Devices

Print ISBN: 978-1-4419-8839-3

Electronic ISBN: 978-1-4419-8840-9

Copyright-Jahr: 2011

DOI
https://doi.org/10.1007/978-1-4419-8840-9_5

Neuer Inhalt

    Bildnachweise