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Erschienen in:
01.03.2012
Ferroelectric and dielectric properties of Bi4-xNdxTi3O12 thin films prepared by sol–gel method
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 3/2012
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Abstract
Bi4-xNdxTi3O12 (BNT-x, x = 0, 0.25, 0.50, 0.75 and 1.0) thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol–gel method. The microstructure, ferroelectric and dielectric properties of BNT-x thin films were investigated. The single-phase BNT-x thin films were obtained. With increasing Nd content, the preferred orientation changed from random to (117) and surface morphologies changed from the mixture of rod- and plate-like grains to rod-like grains. The Nd substitution improved the ferroelectric and dielectric properties of BTO films. BNT-x films showed better electrical properties at x = 0.50—1.0. BNT-0.75 film exhibited the best electrical properties with remanent polarization (2P
r) of 26.6 μC/cm2, dielectric constant (ε
r) of 366 (at 1 MHz), dielectric loss (tanδ) of 0.034 (at 1 MHz), leakage current density (J) of ±3.0 × 10−6 A/cm2 (at ± 5 V) and fatigue-free characteristics.