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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2018

16.03.2018

Inorganic based hole transport materials for perovskite solar cells

verfasst von: S. Karuppuchamy, G. Murugadoss, K. Ramachandran, Vibha Saxena, R. Thangamuthu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2018

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Abstract

In this article, we report the photovoltaic performance of MAPbI3 perovskite using inorganic hole transport materials such as CuI and CuSCN. Structural, optical and morphological investigations were carried out by X-ray diffraction, X-ray photoelectron spectroscopy, UV–visible absorption and scanning electron microscopy. Two different architectures such as mesoscopic (FTO/TiO2/MAPbI3/CuSCN/Au) and inverted (ITO/CuI/MAPbI3/PCBM/Ag) structures were used. The devices displayed (cell area of 0.25 cm2) a short-circuit current density (Jsc) of 16.82 mA/cm2, open-circuit voltage (Voc) of 0.89 V, fill factor of 61.4%, and a PCE of 9.2%. Under similar conditions, the device with CuI shows a PCE of 3.4%, with a decrease in the Jsc (12.30 mA/cm2), fill factor (47.20%) and Voc (0.57 V). The variations of the device performance have been discussed in detail.
Vorheriger Artikel Excess iodine as the interface recombination center limiting the open-circuit voltage of CuI-based perovskite planar solar cell
Nächster Artikel High-temperature reliability of low-temperature and pressureless micron Ag sintered joints for die attachment in high-power device

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Metadaten
Titel
Inorganic based hole transport materials for perovskite solar cells
verfasst von
S. Karuppuchamy
G. Murugadoss
K. Ramachandran
Vibha Saxena
R. Thangamuthu
Publikationsdatum
16.03.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8902-x

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