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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 5/2020

01.02.2020

Giant magnetization and ultra-low loss in non-magnetic ion-substituted barium nanohexaferrite matrix

verfasst von: Virender Pratap Singh, Khalid Mujasam Batoo, M. Singh, Sanjeev Kumar, Gagan Kumar

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2020

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Abstract

Ba0.7Nd0.3CdxFe12−xO19 nanohexaferrites have been synthesized by sol–gel method. Rietveld refined X-ray diffraction study predicted the single phase formation with c/a ratio 3.93. The magnetic and dielectric properties have been significantly improved with the addition of cadmium ions. An increase in the saturation magnetization (65.01–103.46 emu/g) and retentivity (32.15–51.90 emu/g) has been observed with the incorporation of cadmium ions and incredible enhancement in the saturation magnetization, up to 103.46 emu/g, is observed for x = 0.3. The value of magnetization so obtained is the prime achievement of the present work. The dielectric constant (εʹ), dielectric loss (εʺ), magnetic permeability (μʹ) and magnetic loss (μʺ) are investigated over GHz frequency range. The results are explained in the light of Maxwell–Wagner model. Further, the Mössbauer spectroscopic analysis of the synthesized nanohexaferrites is also carried out to support the magnetic study.
Vorheriger Artikel Bi3+-based luminescent thermometry in perovskite-type CaZrO3 phosphor
Nächster Artikel The effects of air, oxygen and water exposure on the sub-bandgap absorption, the electronic conductivity and the ambipolar diffusion length in highly crystalline microcrystalline silicon films for photovoltaic applications

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Metadaten
Titel
Giant magnetization and ultra-low loss in non-magnetic ion-substituted barium nanohexaferrite matrix
verfasst von
Virender Pratap Singh
Khalid Mujasam Batoo
M. Singh
Sanjeev Kumar
Gagan Kumar
Publikationsdatum
01.02.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 5/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-02943-5

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