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Journal of Sol-Gel Science and Technology
Erschienen in: Journal of Sol-Gel Science and Technology 1/2013

01.10.2013 | Original Paper

Synthesis of two-dimensional gallium nitride via spin coating method: influences of nitridation temperatures

verfasst von: C. Y. Fong, S. S. Ng, F. K. Yam, H. Abu Hassan, Z. Hassan

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 1/2013

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Abstract

This paper reports the synthesis and characterization of gallium nitride (GaN) thin films deposited on p-type silicon (100) substrates by using low cost spin coating method under various nitridation temperatures. This work demonstrated that spin coating with the new prepared precursor solution can be used as a versatile method for the successfully growth of GaN thin films. Furthermore, the influence of varying nitridation temperatures on the structural, morphological, and optical properties of synthesized GaN thin films were studied in this work. The GaN thin films were characterized by X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. All the characteristics of the GaN thin films were effectively improved with the increasing of the nitridation temperatures from 750 to 950 °C and degraded at temperature of 1,050 °C. The measured results show that nitridation temperature plays an important role in improving the crystalline quality of the GaN thin films and the most efficient nitridation temperature was at 950 °C.
Vorheriger Artikel Orientation of tungsten trioxide thin films fabricated by sol–gel method using aqueous sols of colloidal layered tungstates
Nächster Artikel Fabrication and characterization of composition-gradient CuO/SiO2 composite aerogel

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Metadaten
Titel
Synthesis of two-dimensional gallium nitride via spin coating method: influences of nitridation temperatures
verfasst von
C. Y. Fong
S. S. Ng
F. K. Yam
H. Abu Hassan
Z. Hassan
Publikationsdatum
01.10.2013
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 1/2013
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-013-3139-x

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