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01.05.2012 | Research Paper

Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties

verfasst von: J. Martín-Sánchez, L. Marques, E. M. F. Vieira, Q. T. Doan, A. Marchand, A. El Hdiy, A. G. Rolo, S. R. C. Pinto, M. M. D. Ramos, A. Chahboun, M. J. M. Gomes

Erschienen in: Journal of Nanoparticle Research | Ausgabe 5/2012

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Abstract

In this work, we report on the synthesis of Ge nanocrystals (NCs) by pulsed laser deposition (PLD) at room temperature (RT) in an argon atmosphere without any further annealing process. Our results show that functional thin films of crystalline Ge nanoparticles with spherical shapes can be obtained by PLD directly on alumina layers deposited on n-doped Si (100) substrates. In addition, we also demonstrate that a uniform size distribution of NCs with an average diameter of about 3 nm and a density of 2.3 × 10¹¹ cm⁻² can be obtained by optimizing a shadow mask set-up, where a solid disk is introduced between the target and the substrate. Charge/discharge effects in Ge NCs deposited on a high-k amorphous alumina layer are also evidenced by conductive atomic force microscopy, which makes them suitable for memory applications.

Vorheriger Artikel Regulation of catalytic behaviour of hydrolases through interactions with functionalized carbon-based nanomaterials

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Titel: Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: structural, morphological, and charge trapping properties
verfasst von: J. Martín-Sánchez
L. Marques
E. M. F. Vieira
Q. T. Doan
A. Marchand
A. El Hdiy
A. G. Rolo
S. R. C. Pinto
M. M. D. Ramos
A. Chahboun
M. J. M. Gomes
Publikationsdatum: 01.05.2012
Verlag: Springer Netherlands
Erschienen in: Journal of Nanoparticle Research / Ausgabe 5/2012
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI: https://doi.org/10.1007/s11051-012-0843-3

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