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Erschienen in: Optical and Quantum Electronics 10/2015

01.10.2015

Efficiency improvement of CdZnTe solar cell by modification of interface layer

verfasst von: Neda Rezaie, Abdolnabi Kosarian

Erschienen in: Optical and Quantum Electronics | Ausgabe 10/2015

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Abstract

Solar conversion efficiency of graded Cd1−x Zn x Te solar cells is investigated numerically in this work. It is found that the efficiency can be improved if a p-Cd0.6Zn0.4Te layer is added to the basic n-ZnO/n-CdS/p-CdTe structure. On the other hand, there is a sharp conduction band offset at the interface of the CdTe and p-Cd0.6Zn0.4Te layer that affects the cell performance. At the next step, in order to remove the discontinuity at the conduction band between p-CdTe and p-Cd0.6Zn0.4Te, we have replaced the Cd1−x Zn x Te with a graded region where the Cd1−x Zn x Te layer is divided into several individual thinner layers. As a result, the electron (minority carrier) collection at the hetero-interface improves, duo to the establishment of an extra electric field across the graded region, leading to an increase in the solar conversion efficiency. The number of layers and doping concentration of the graded region plays an important role in the performance of the cell. Finally, it had been found that the ZnO/CdS/CdTe/Cd1−x Zn x Te/p-Cd0.6Zn0.4Te structure in which the Cd1−x Zn x Te region consists of 25 thin layers with 1018 cm−3 doping concentration will have an efficiency ≈1 % higher than that of the ungraded ZnO/CdS/CdTe structure.

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Metadaten
Titel
Efficiency improvement of CdZnTe solar cell by modification of interface layer
verfasst von
Neda Rezaie
Abdolnabi Kosarian
Publikationsdatum
01.10.2015
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 10/2015
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-015-0204-4

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