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Journal of Materials Science
Erschienen in: Journal of Materials Science 5/2018

31.10.2017 | Electronic materials

Magnetism induced by 3d transition metal atom doping in InSe monolayer

verfasst von: Xueping Li, Congxin Xia, Juan Du, Wenqi Xiong

Erschienen in: Journal of Materials Science | Ausgabe 5/2018

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Abstract

Based on density functional theory, we study the electronic structures and magnetism of 3d transition metal (TM)-doped two-dimensional (2D) InSe monolayer by means of first-principles methods. The results show that all the doping cases can be easily realized under Se-rich experimental environments. For the Sc- and Cu-doped InSe monolayers, the nonmagnetic semiconducting properties can be retained. The Ti-, Cr- and Ni-doped InSe monolayers possess the half-metal behavior. Moreover, the diluted magnetic semiconductor characteristics can be found in the V-, Mn-, Co-, Fe- and Zn-doped cases. Interestingly, the Ti-, V-, Cr- and Fe-doped 2D InSe systems exhibit ferromagnetic ground states, while antiferromagnetic ground states occur in the Mn-, Co- and Ni-doped InSe monolayers.
Vorheriger Artikel Strong re-entrant cellular structures with negative Poisson’s ratio
Nächster Artikel Evolution of glassy carbon under heat treatment: correlation structure–mechanical properties

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Literatur
1.
Jung CS, Shojaei F, Park K, Oh JY, Im HS, Jang DM, Park J, Kang HS (2015) Red-to-ultraviolet emission tuning of two-dimensional gallium sulfide/selenide. ACS Nano 9:9585–9593CrossRef
2.
Marks TJ, Hersam MC (2015) Materials science: semiconductors grown large and thin. Nature 520:631–632CrossRef
3.
Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L (2014) Electronics based on two-dimensional materials. Nat Nanotechnol 9:768–779CrossRef
4.
Franklin AD (2015) Nanomaterials in transistors: from high-performance to thin-film applications. Science 349:aab2750CrossRef
5.
Li X, Yang J (2014) CrXTe3 (X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors. J Mater Chem C 2:7071–7076CrossRef
6.
Mak KF, He K, Shan J, Heinz TF (2012) Control of valley polarization in monolayer MoS2 by optical helicity. Nat Nanotechnol 7:494–498CrossRef
7.
Ma Y, Dai Y, Guo M, Niu C, Lu J, Huang B (2011) Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers. Phys Chem Chem Phys 13:15546–15553CrossRef
8.
Zheng H, Zhang J, Yang S, Du X, Yan Y (2015) A first-principles study on the magnetic properties of nonmetal atom doped phosphorene monolayers. Phys Chem Chem Phys 17:16341–16350CrossRef
9.
Cai L, He J, Liu Q, Yao T, Chen L, Yan W, Hu F, Jiang Y, Zhao Y, Hu T, Sun Z, Wei S (2015) Vacancy-induced ferromagnetism of MoS2 nanosheets. J Am Chem Soc 137:2622–2627CrossRef
10.
Ataca C, Ciraci S (2010) Functionalization of BN honeycomb structure by adsorption and substitution of foreign atoms. Phys Rev B 82:165402CrossRef
11.
Srivastava P, Hembram K, Mizuseki H, Lee KR, Han SS, Kim S (2015) Tuning the electronic and magnetic properties of phosphorene by vacancies and adatoms. J Phys Chem C 119:6530–6538CrossRef
12.
Bekaroglu E, Topsakal M, Cahangirov S, Ciraci S (2010) First-principles study of defects and adatoms in silicon carbide honeycomb structures. Phys Rev B 81:075433CrossRef
13.
Huang W, Gan L, Li H, Ma Y, Zhai T (2016) 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics. CrystEngComm 18:3968–3984CrossRef
14.
Han G, Chen ZG, Drennan J, Zou J (2014) Indium selenides: structural characteristics, synthesis and their thermoelectric performances. Small 10:2747–2765CrossRef
15.
da Costa PG, Dandrea RG, Wallis RF, Balkanski M (1993) First-principles study of the electronic structure of γ-InSe and β-InSe. Phys Rev B Condens Matter 48:14135–14141CrossRef
16.
Mudd G, Svatek S, Ren T, Patane A, Makarovsky O, Eaves L, Beton P, Kovalyuk Z, Lashkarev G, Kudrynskyi Z, Dmitriev A (2013) Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement. Adv Mater 25:5714–5718CrossRef
17.
Rybkovskiy DV, Osadchy AV, Obraztsova ED (2014) Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe. Phys Rev B 90:235302CrossRef
18.
Balkanski M, Julien C, Jouanne M (1987) Electron and phonon aspects in a lithium intercalated InSe cathode. J Power Sources 20:213–219CrossRef
19.
Lei S, Ge L, Najmaei S, George A, Kappera R, Lou J, Chhowalla M, Yamaguchi H, Gupta G, Vajtai R, Mohite AD, Ajayan PM (2014) Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe. ACS Nano 8:1263–1272CrossRef
20.
Feng W, Guo GY, Yao Y (2016) Tunable magneto-optical effects in hole-doped group-IIIA metal-monochalcogenide monolayers. 2D Mater 4:015017CrossRef
21.
Dey P, Paul J, Glikin N, Kovalyuk ZD, Kudrynskyi ZR, Romero AH, Karaiskaj D (2014) Mechanism of excitonic dephasing in layered InSe crystals. Phys Rev B 89:125128CrossRef
22.
Debbichi L, Eriksson O, Lebègue S (2015) Two-dimensional indium selenides compounds: an ab initio study. J Phys Chem Lett 6:3098–3103CrossRef
23.
Zólyomi V, Drummond ND, Fal’ko VI (2014) Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations. Phys Rev B 89:205416CrossRef
24.
Ho CH, Chu YJ (2015) Bending photoluminescence and surface photovoltaic effect on multilayer InSe. 2D Microplate Crystals. Adv Opt Mater 3:1750–1758CrossRef
25.
Sun C, Xiang H, Xu B, Xia Y, Yin J, Liu Z (2016) Ab initio study of carrier mobility of few-layer InSe. Appl Phys Express 9:035203CrossRef
26.
Bandurin DA, Tyurnina AV, Geliang LY, Mishchenko A, Zolyomi V, Morozov SV, Kumar RK, Gorbachev RV, Kudrynskyi ZR, Pezzini S, Kovalyuk ZD, Zeitler U, Novoselov KS, Patane A, Eaves L, Grigorieva IV, Fal’ko VI, Geim AK, Cao Y (2016) High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nat Nanotechnol 12:223–227CrossRef
27.
Feng W, Zheng W, Cao W, Hu P (2014) Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Adv Mater 26:6587–6593CrossRef
28.
Tamalampudi SR, Lu YY, Kumar UR, Sankar R, Liao CD, Moorthy BK, Cheng CH, Chou FC, Chen YT (2014) High performance and bendable few-layered InSe photodetectors with broad spectral response. Nano Lett 14:2800–2806CrossRef
29.
30.
Kusakabe K, Maruyama M (2003) Magnetic nanographite. Phys Rev B 67:092406CrossRef
31.
Chan JA, Montanari B, Gale JD, Bennington SM, Taylor JW, Harrison NM (2004) Magnetic properties of polymerized C 60: the influence of defects and hydrogen. Phys Rev B 70:041403CrossRef
32.
Yazyev OV, Helm L (2007) Defect-induced magnetism in graphene. Phys Rev B 75:125408CrossRef
33.
Yang JH, Kim D, Hong J, Qian X (2010) Magnetism in boron nitride monolayer: adatom and vacancy defect. Surf Sci 604:1603–1607CrossRef
34.
Wang ZF, Zhang Y, Liu F (2011) Formation of hydrogenated graphene nanoripples by strain engineering and directed surface self-assembly. Phys Rev B 83:041403CrossRef
35.
Ming W, Wang ZF, Zhou M, Yoon M, Liu F (2016) Formation of ideal rashba states on layered semiconductor surfaces steered by strain engineering. Nano Lett 16:404–409CrossRef
36.
Lehtinen PO, Foster AS, Ayuela A, Krasheninnikov A, Nordlund K, Nieminen RM (2003) Magnetic properties and diffusion of adatoms on a graphene sheet. Phys Rev Lett 91:017202CrossRef
37.
Cao C, Wu M, Jiang J, Cheng H (2010) Transition metal adatom and dimer adsorbed on graphene: induced magnetization and electronic structures. Phys Rev B 81:205424CrossRef
38.
Zhou Y, Yang P, Zu H, Gao F, Zu XT (2013) Electronic structures and magnetic properties of MoS2 nanostructures: atomic defects, nanoholes, nanodots and antidots. Phys Chem Chem Phys 15:10385CrossRef
39.
Liu RF, Cheng C (2007) Ab initio studies of possible magnetism in a BN sheet by nonmagnetic impurities and vacancies. Phys Rev B 76:014405CrossRef
40.
Cao D, Shu HB, Wu TQ, Jiang Z, Jiao Z, Cai M, Hu W (2016) First-principles study of the origin of magnetism induced by intrinsic defects in monolayer MoS2. Appl Surf Sci 361:199–205CrossRef
41.
Hashmi A, Hong J (2015) Transition metal doped phosphorene: first-principles study. J Phys Chem C 119:9198–9204CrossRef
42.
Yu W, Zhu Z, Niu CY, Cho J, Jia Y (2016) Dilute magnetic semiconductor and half-metal behaviors in 3d transition-metal doped black and blue phosphorenes: a first-principles study. Nanoscale Res Lett 11:1–9CrossRef
43.
Zhou YG, Dong J, Wang ZG, Xiao H, Gao F, Zu X (2010) Electronic and magnetic properties of metal-doped BN sheet: a first-principles study. Phys Chem Chem Phys 12:7588–7592CrossRef
44.
Cheng YC, Zhu ZY, Mi WB, Guo Z, Schwingenschlogl U (2013) Prediction of two-dimensional diluted magnetic semiconductors: doped monolayer MoS2 systems. Phys Rev B 87:100401CrossRef
45.
Kresse G, Hafner J (1994) Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium. Phys Rev B 49:14251–14269CrossRef
46.
Kresse G, Furthmüller J (1996) Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B 54:11169–11186CrossRef
47.
Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865–3868CrossRef
48.
Blöchl PE (1994) Projector augmented-wave method. Phys Rev B 50:17953–17979CrossRef
49.
Monkhorst HJ, Pack JD (1976) Special points for Brillouin-zone integrations. Phys Rev B 13:5188–5192CrossRef
Metadaten
Titel
Magnetism induced by 3d transition metal atom doping in InSe monolayer
verfasst von
Xueping Li
Congxin Xia
Juan Du
Wenqi Xiong
Publikationsdatum
31.10.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 5/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1749-3

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