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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 2/2019

05.12.2018

Microstructure and thermoelectric properties of In2O3/ITO thin film thermocouples with Al2O3 protecting layer

verfasst von: Yantao Liu, Wei Ren, Peng Shi, Dan Liu, Yijun Zhang, Ming Liu, Qijing Lin, Bian Tian, Zhuangde Jiang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2019

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Abstract

In2O3/ITO thin film thermocouples (TFTCs) with alumina protecting layer were fabricated on alumina substrates. The effects of protecting layer on their performance at higher temperature and long term service were investigated accordingly. In2O3 and ITO thin films were prepared by radio frequency magnetron sputtering methods, while the alumina protecting layer was prepared by traditional spin-coating methods. Microstructural and thermoelectric properties of the In2O3/ITO TFTCs with and without alumina (Al2O3) protecting layer were investigated as a function of sintering time from 2 to 10 h at 1250 °C. The results show that, the existence of alumina protecting layer can effectively increase the performance capabilities of thermocouples at high temperatures by inhibiting the volatilization of the thin film. In2O3/ITO TFTCs with protecting layer can work normally over 10 h at 1250 °C while Seebeck coefficient is 131.7 µV/°C. The drift rate can reach 3.05 °C/h, which is much better than those without protecting layer.
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Metadaten
Titel
Microstructure and thermoelectric properties of In2O3/ITO thin film thermocouples with Al2O3 protecting layer
verfasst von
Yantao Liu
Wei Ren
Peng Shi
Dan Liu
Yijun Zhang
Ming Liu
Qijing Lin
Bian Tian
Zhuangde Jiang
Publikationsdatum
05.12.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 2/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-0450-x

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