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Erschienen in:
07.11.2015
Microstructures and dielectric properties of inverse-spinel structure Zn2SnO4 thin films by RF magnetron sputtering
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2016
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Abstract
The dielectric properties of Zn2SnO4 thin films were investigated. Zn2SnO4 thin films were prepared using the radio frequency magnetron sputtering with various depositing times. The X-ray diffraction patterns of the Zn2SnO4 thin films revealed that Zn2SnO4 is the main crystalline phase, which is accompanied by a little SnO2 as the second phase. The average grain size of the Zn2SnO4 thin films in the range from 12.3 to 14.2 nm as the depositing time varied from 60 to 120 min. Dielectric constants (\(\varepsilon_{r}\)) of 19–75 and loss factor of 0.10–0.19 of Zn2SnO4 thin films were measured at 1 MHz with depositing times in the range of 60–120 min.