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01.05.2013 | Research Paper

Morphology and growth of capped Ge/Si quantum dots

verfasst von: Yizhak Yacoby, Naomi Elfassy, Samit K. Ray, Raj K. Singha, Samaresh Das, Eyal Cohen, Shira Yochelis, Roy Clarke, Yossi Paltiel

Erschienen in: Journal of Nanoparticle Research | Ausgabe 5/2013

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Abstract

The morphology, atomic structure, and chemical composition of small (4 nm average height and 20 nm average diameter), dense capped MBE-grown Ge/Si quantum dots are studied using an energy-differential extension of the direct X-ray phasing method, COBRA. Our results lead to the following conclusions: (i) the quantum dot system has a partial wetting layer; (ii) in the lower parts of the dots, the Ge content is small and increases toward the top; and (iii) the contact angle between the dots and the substrate is acute, consistent with the presence of a wetting layer. A growth mechanism compatible with these findings is proposed.

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Titel: Morphology and growth of capped Ge/Si quantum dots
verfasst von: Yizhak Yacoby
Naomi Elfassy
Samit K. Ray
Raj K. Singha
Samaresh Das
Eyal Cohen
Shira Yochelis
Roy Clarke
Yossi Paltiel
Publikationsdatum: 01.05.2013
Verlag: Springer Netherlands
Erschienen in: Journal of Nanoparticle Research / Ausgabe 5/2013
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI: https://doi.org/10.1007/s11051-013-1608-3

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