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2017 | OriginalPaper | Buchkapitel

10. Multiple-Times Programmable Logic Nonvolatile Memory

verfasst von : Yanjun Ma, Edwin Kan

Erschienen in: Non-logic Devices in Logic Processes

Verlag: Springer International Publishing

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Abstract

In this chapter, we focus on the Multiple-Times Programmable (MTP) embedded NVM using basic logic CMOS processes. Several types of floating-gate-based NVMs are discussed, including medium density eNVM based on two-transistor (2T) memory cell, and low density but also low-power three-transistor (3T) memory cell. In the last section, we review the charge trapping-based NVM cell design.

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Literatur
Zurück zum Zitat Diorio, C., Bernard, F., Humes, T., & Pesavento, A. (2007). Rewritable electronic fuses. US Patent 7,242,614. Diorio, C., Bernard, F., Humes, T., & Pesavento, A. (2007). Rewritable electronic fuses. US Patent 7,242,614.
Zurück zum Zitat Glidden, R., Bockorick, C., Cooper, S., Diorio, C., Dressler, D., Gutnik, V., et al. (2004). Design of ultra-low-cost UHF RFID tags for supply chain applications. IEEE Communications Magazine, 42(8), 140–151.CrossRef Glidden, R., Bockorick, C., Cooper, S., Diorio, C., Dressler, D., Gutnik, V., et al. (2004). Design of ultra-low-cost UHF RFID tags for supply chain applications. IEEE Communications Magazine, 42(8), 140–151.CrossRef
Zurück zum Zitat Lindhorst, C. A., Diorio, C. J., Gilliland, T. N., Pesavento, A., Srinivas, S., Ma, Y., et al. (2005). Differential floating gate nonvolatile memories. US Patent 6,950,342. Lindhorst, C. A., Diorio, C. J., Gilliland, T. N., Pesavento, A., Srinivas, S., Ma, Y., et al. (2005). Differential floating gate nonvolatile memories. US Patent 6,950,342.
Zurück zum Zitat Ma, Y., Deng, R., Nguyen, H., Wang, B., Pesavento, A., Niset, M., et al. (2008). Floating-gate nonvolatile memory with ultrathin 5-nm tunnel oxide. IEEE Transactions on Electron Devices, 55, 3476–3481.CrossRef Ma, Y., Deng, R., Nguyen, H., Wang, B., Pesavento, A., Niset, M., et al. (2008). Floating-gate nonvolatile memory with ultrathin 5-nm tunnel oxide. IEEE Transactions on Electron Devices, 55, 3476–3481.CrossRef
Zurück zum Zitat Ma, Y., Gilliland, T., Wang, B., Paulsen, R. P., Wang, C., Nguyen, H., et al. (2004). Reliability of pFET EEPROM with 70A tunnel oxide manufactured in generic logic CMOS processes. IEEE Transactions on Device and Materials Reliability, 4, 353–356.CrossRef Ma, Y., Gilliland, T., Wang, B., Paulsen, R. P., Wang, C., Nguyen, H., et al. (2004). Reliability of pFET EEPROM with 70A tunnel oxide manufactured in generic logic CMOS processes. IEEE Transactions on Device and Materials Reliability, 4, 353–356.CrossRef
Zurück zum Zitat Pesavento, A., Gilliand, T., Lindhorst, C., Srinivas, S., Bernard, F., Salazar, S., et al. (2004). Embedded non-volatile memory in logic CMOS. In Non-volatile Semiconductor Memory Workshop (p. 49). Monterey: IEEE. Pesavento, A., Gilliand, T., Lindhorst, C., Srinivas, S., Bernard, F., Salazar, S., et al. (2004). Embedded non-volatile memory in logic CMOS. In Non-volatile Semiconductor Memory Workshop (p. 49). Monterey: IEEE.
Zurück zum Zitat Pesavento, A., & Hyde, J. (2013). PFET nonvolatile memory. US Patent 8,416,630. Pesavento, A., & Hyde, J. (2013). PFET nonvolatile memory. US Patent 8,416,630.
Zurück zum Zitat Pevavento, A., & Langlinais, J. (2010). Radio frequency tag including configurable single-bit/dual-bits memory. US PTO. US Patent 7,796,450. Pevavento, A., & Langlinais, J. (2010). Radio frequency tag including configurable single-bit/dual-bits memory. US PTO. US Patent 7,796,450.
Zurück zum Zitat Runnion, E., Gladstone, S., Scott, R., Dumin, D. J., & Lie L. (1996). Limitation on oxide thicknesses in flash EEPROM applications. In Proceedings of International Reliability Physics Symposium (pp. 93–99). IEEE. Runnion, E., Gladstone, S., Scott, R., Dumin, D. J., & Lie L. (1996). Limitation on oxide thicknesses in flash EEPROM applications. In Proceedings of International Reliability Physics Symposium (pp. 93–99). IEEE.
Zurück zum Zitat Sharma, U. (1993). A novel technology for megabit density, low power, high speed NVRAMs. In VLSI Symposium (p. 53). Japan. Sharma, U. (1993). A novel technology for megabit density, low power, high speed NVRAMs. In VLSI Symposium (p. 53). Japan.
Zurück zum Zitat Sung, Y., Lin, P., Chen, J., Chang, T., King, Y., & Lin, C. (2014). A new SAW-like self-recover of interface states in nitride-based memory cell. In Technical Digest of IEEE International Electron Device Meeting (pp. 494–497). San Francisco: IEEE. Sung, Y., Lin, P., Chen, J., Chang, T., King, Y., & Lin, C. (2014). A new SAW-like self-recover of interface states in nitride-based memory cell. In Technical Digest of IEEE International Electron Device Meeting (pp. 494–497). San Francisco: IEEE.
Metadaten
Titel
Multiple-Times Programmable Logic Nonvolatile Memory
verfasst von
Yanjun Ma
Edwin Kan
Copyright-Jahr
2017
DOI
https://doi.org/10.1007/978-3-319-48339-9_10

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