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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2013

01.10.2013

Novel X8R-type BaTiO3-based ceramics with a high dielectric constant created by doping nanocomposites with Li–Ti–Si–O

verfasst von: Zhenyu Hu, Bin Cui, Mei Li, Leilei Li

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2013

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Abstract

A novel system of temperature-stable Electronic Industries Alliance X8R dielectric materials with high dielectric constants can be obtained by doping BaTiO3-K0.5Na0.5NbO3 ceramic nanocomposites with 0.7 wt% Li–Ti–Si–O. The dielectric constant is greater than 3,960 at 25 °C, with a dielectric loss lower than 0.8 % and a temperature coefficient of capacitance less than ±12 % from −55 to 150 °C. The doping increased the degree of tetragonality, grain size, and density, thereby increasing the dielectric constant. We provide additional data on the phase composition, microstructure, and dielectric properties of the doped samples. These materials show high potential for applications in X8R-type multilayer ceramic capacitors.
Vorheriger Artikel Effects of post-rapid thermal annealing on structural, electrical and optical properties of hydrogenated aluminum doped zinc oxide thin films
Nächster Artikel Linear and quadratic magnetoelectric effect in CNMFO:PZT magnetoelectric composite

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Metadaten
Titel
Novel X8R-type BaTiO3-based ceramics with a high dielectric constant created by doping nanocomposites with Li–Ti–Si–O
verfasst von
Zhenyu Hu
Bin Cui
Mei Li
Leilei Li
Publikationsdatum
01.10.2013
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2013
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1328-6

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