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Optical and Quantum Electronics

Erschienen in:

01.05.2020

Numerical simulation of multilayer organic light-emitting diodes with host–guest emissive layer: the role of defect states

verfasst von: Pezhman Sheykholeslami Nasab, Mahdi Davoudi Darareh, Mohammad Hassan Yousefi, Ali Rostamnejadi

Erschienen in: Optical and Quantum Electronics | Ausgabe 5/2020

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Abstract

In this study, a comprehensive model for the numerical simulation of electrical and optical characteristics of multilayer organic light-emitting devices (OLED) is presented. The model consists of three parts: charge carrier transport model, exciton model, and a post-processing part for calculating luminance. The defect states in the organic layers are modeled and are introduced into the equations. For demonstrating the rule of the defect states in such devices, a multilayer OLED is considered consisting of a host–guest emissive layer sandwiched between electron and hole transport layers. The current density and luminance results of the analyzed device are compared with the experimental data. We have found that by considering the defect states, there is good accordance between the simulation results and the experimental data.

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Titel: Numerical simulation of multilayer organic light-emitting diodes with host–guest emissive layer: the role of defect states
verfasst von: Pezhman Sheykholeslami Nasab
Mahdi Davoudi Darareh
Mohammad Hassan Yousefi
Ali Rostamnejadi
Publikationsdatum: 01.05.2020
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 5/2020
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-020-02387-5

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