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Erschienen in:
1988 | OriginalPaper | Buchkapitel
On the Radiation Induced Coloration of SiO2
verfasst von : W. Hohenau, I. Godmanis
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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The radiation induced absorption spectra of crystalline and glassy SiO2 generally consist of broad overlapping A (450–650 nm), B (290–350 nm) and C (200–250 nm) bands1. Their relative intensities and distinct spectral positions slightly change in different types of crystalline and glassy SiO22. The absorption in the A band is attributed to the aluminium hole (Al/e+) and the C band region to E′ type defect centers3,4. Contrary to this is, the nature of the color centers forming the B band, is not determined. A more effective detection of this band in short time experiments as during stationary absorption measurements could indicate an unstable character of corresponding color centers in SiO25.