Oxidation of H-Terminated Silicon

Recently, the densities, functions and operating speeds of integrated circuits driven by ever-increasing numbers of metal-oxide-semiconductor field-effect transistors (MOSFETs) have increased remarkably to produce not only ultrahigh-speed computers, but also many intelligent operating systems. This is largely a result of continuing progress in Si single-crystal growth and Si-related process and microfabrication technologies for integrated circuits. It is made possible by the stable electrical and thermal properties of Si-Si0₂ systems and the abundant silicon resources on the earth.