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Journal of Nanoparticle Research

Erschienen in:

01.02.2024 | Research paper

Photoluminescence of annealed Al₂O₃/Ge and Al₂O₃/Si/Ge/Si multilayer nanostructures

verfasst von: Olga M. Sreseli, Marina A. Elistratova, Eugene V. Beregulin, Daniil A. Yushkov, Alexey V. Ershov

Erschienen in: Journal of Nanoparticle Research | Ausgabe 2/2024

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Abstract

We perform a photoluminescence comparison of Ge nanocrystals in an Al₂O₃ matrix structures with similar Ge-Si core–shell nanoparticles structures. Al₂O₃/Ge and Al₂O₃/Si/Ge/Si nanoperiodic structures were obtained by electron beam evaporation with subsequent high-temperature (800–900 °C) annealing in an inert medium. The first type of structure has an intensive visible luminescence, which may be associated with a large number of structural defects. Al₂O₃/Si/Ge/Si structures have a very weak photoluminescence in the visible spectral region and an additional maximum in the 800–1000 nm. The last one is caused mostly by Ge/SiGe nanocrystals. Further work to enhance this infrared emission by increasing the layer thickness, testing annealing modes, duration, and annealing atmosphere opens up prospects for the use of such structures in light-emitting devices.

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Titel: Photoluminescence of annealed Al2O3/Ge and Al2O3/Si/Ge/Si multilayer nanostructures
verfasst von: Olga M. Sreseli
Marina A. Elistratova
Eugene V. Beregulin
Daniil A. Yushkov
Alexey V. Ershov
Publikationsdatum: 01.02.2024
Verlag: Springer Netherlands
Erschienen in: Journal of Nanoparticle Research / Ausgabe 2/2024
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI: https://doi.org/10.1007/s11051-024-05947-y

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