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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 11/2016

01.11.2016

Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors

verfasst von: Kuang-Po Hsueh, Hsien-Chin Chiu, Jinn-Kong Sheu, Yu-Hsiang Yeh

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2016

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Abstract

We report a p–n heterojunction ultraviolet photodetector (PD) based on an Al-doped MgxZn1−xO (AMZO)/Al0.08Ga0.92N heterojunction. AMZO films with 5 wt% of Al2O3 were deposited onto p–Al0.08Ga0.92N by using radio-frequency magnetron sputtering, and they were annealed at 700, 800, and 900 °C in a nitrogen ambient for 60 s. The photoluminescence spectra of the AMZO films were measured at 17 K and show two major peaks. A broad visible band could be attributed to the presence of structural defects. The AMZO film annealed at 800 °C showed a lower emission band in the visible region because of the presence of fewer defects compared with the other AMZO films. The wavelength that corresponds with the peak responsivity of the PD annealed at 800 °C was approximately 200 nm, and the cutoff wavelength was approximately 250 nm. Furthermore, the current–voltage characteristics of the Al0.08Ga0.92N/AMZO p–n junction PD showed a high leakage current. The PD annealed at 800 °C exhibited a dark current of 1.56 μA at a bias of −3 V.
Vorheriger Artikel Numerical modeling of the impact of pump wavelength on Yb-doped fiber amplifier performance
Nächster Artikel Light trapping in p-i-n superlattice based InGaN/GaN solar cells using photonic crystal

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Metadaten
Titel
Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors
verfasst von
Kuang-Po Hsueh
Hsien-Chin Chiu
Jinn-Kong Sheu
Yu-Hsiang Yeh
Publikationsdatum
01.11.2016
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 11/2016
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-016-0773-x

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