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Optical and Quantum Electronics

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01.03.2019

Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power

verfasst von: Asim Mantarcı, Mutlu Kundakçi

Erschienen in: Optical and Quantum Electronics | Ausgabe 3/2019

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Abstract

GaN thin film was successfully produced on \(n{\text{-}}Si\left({100} \right)\) substrate by RF magnetron sputter under different RF power. Experimental measurement techniques such as UV/Vis spectroscopy, field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and Micro-Raman Spectroscopy were used to research effects of Radio Frequency power on physical properties of produced thin film. It has been found that produced thin film was polycrystalline structure with (100) and (110) planes of hexagonal \(GaN\) from X-ray diffraction measurement result. It also proved that increasing RF power gives rise to deterioration in crystal quality of \(GaN\) thin film. Reason of this deterioration was discussed. It has been achieved that increasing RF power has resulted in decreasing optical band gap energy of \(GaN\) thin film. Reasons for these changes in optical band gap energy were explained. It was seen that some thin films were grown as layer-plus-island mode (Stranski–Krastanov growth mode) and others were grown as layer-by-layer growth mode (Frank van der Merwe mode) from AFM analysis. It has been found that increasing RF power has resulted in improvement of surface morphology of thin film from field emission scanning electron microscopy analysis. However, reaching RF power to 125 W leads to start to deteriorate of surface of \(GaN\) thin film. The reasons for this have been discussed. \(E_{1} \left( {TO} \right)\) transverse optical phonon mode of hexagonal \(GaN\) with different intensity was detected from Micro-Raman Spectroscopy measurement. The reasons for this difference have been discussed. It was concluded that RF power has played a significant role in growing high quality \(GaN\) thin film. Morphological, structural, and optical properties of \(GaN\) thin film were enhanced by controlling RF power, making them a potential candidate for LED, solar cell, diode application.

Vorheriger Artikel Comment on the paper of Mostafa M. A. Khater et al. [Optical and Quantum Electronic, 50 (2018) 155]

Nächster Artikel An investigation of 60Co gamma radiation-induced effects on the properties of nanostructured α-MoO3 for the application in optoelectronic and photonic devices

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Abud, S.H., Selman, A.M., Hassan, Z.: Investigation of structural and optical properties of GaN on flat and porous silicon. Superlattices Microstruct. 97, 586–590 (2016). https://doi.org/10.1016/j.spmi.2016.07.017 ADSCrossRef

Aggarwal, N., Krishna, S.T.C., Goswami, L., Mishra, M., Gupta, G., Maurya, K.K., Singh, S., Dilawar, N., Kaur, M.: Extenuation of stress and defects in GaN films grown on a metal-organic chemical vapor deposition-GaN/c-sapphire substrate by plasma-assisted molecular beam epitaxy. Cryst. Growth Des. 15(5), 2144–2150 (2015). https://doi.org/10.1021/acs.cgd.5b00125 CrossRef

Bragg, W.H., Bragg W.L.: The reflection of X-rays by crystals. Proc. R. Soc. Lond. Ser. A 88(605), 428 (1913)ADSCrossRefMATH

Braniste, T., Ciers, J., Monaico, E., Martin, D., Carlin, J.F., Ursaki, V.V., Sergentu, V.V., Tiginyanu, I.M., Grandjean, N.: Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications. Superlattices Microstruct. 102, 221–234 (2017). https://doi.org/10.1016/j.spmi.2016.12.041 ADSCrossRef

Cui, Z., Ke, X., Li, E., Liu, T.: Electronic and optical properties of titanium-doped GaN nanowires. Mater. Des. 96, 409–415 (2016). https://doi.org/10.1016/j.matdes.2016.02.050 CrossRef

Cui, Z., Ke, X., Li, E., Zhao, T., Qi, Q., Yan, J., Ding, Y., Liu, T.: GaN nanowire field emitters with the adsorption of Pt nanoparticles. RSC Adv. 7(36), 22441–22446 (2017a). https://doi.org/10.1039/C7RA02568H CrossRef

Cui, Z., Li, E., Ke, X., Zhao, T., Yang, Y., Ding, Y., Liu, T., Qu, Y., Xu, S.: Adsorption of alkali-metal atoms on GaN nanowires photocathode. Appl. Surf. Sci. 423, 829–835 (2017b). https://doi.org/10.1016/j.apsusc.2017.06.233 ADSCrossRef

Cui, Z., Li, M., Li, E., Ma, D., Zhao, B.: Optical and field emission performances of bamboo shoot-shaped GaN nanowires. Superlattices Microstruct. 120, 257–261 (2018a). https://doi.org/10.1016/j.spmi.2018.05.050 ADSCrossRef

Cui, Z., Wang, X., Ding, Y., Li, M.: Exploration work function and optical properties of monolayer SnSe allotropes. Superlattices Microstruct. 114, 251–258 (2018b). https://doi.org/10.1016/j.spmi.2017.12.039 ADSCrossRef

Cui, Z., Wang, X., Ding, Y., Zhang, C., Li, M.: Alkali-metal-embedded in monolayer MoS₂: optical properties and work functions. Opt. Quant. Electron. 50(9), 348 (2018c). https://doi.org/10.1007/s11082-018-1612-z CrossRef

Cui, Z., Wang, X., Li, E., Ding, Y., Sun, C., Sun, M.: Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties. Nanoscale Res. Lett. 13(1), 207 (2018d). https://doi.org/10.1186/s11671-018-2625-z ADSCrossRef

Davydov, V.Y., Averkiev, N.S., Goncharuk, I.N., Nelson, D.K., Nikitina, I.P., Polkovnikov, A.S., Smirnov, A.N., Jacobson, M.A., Semchinova, O.K.: Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC. J. Appl. Phys. 82(10), 5097–5102 (1997). https://doi.org/10.1063/1.366310 ADSCrossRef

Demir, M., Yarar, Z., Ozdemir, M.: Effect of polarization and interface roughness on the transport properties of AlGaN/GaN heterostructure. Solid State Commun. 158, 29–33 (2013). https://doi.org/10.1016/j.ssc.2013.01.004 ADSCrossRef

Dyson, A.: Phonon-plasmon coupled modes in GaN. J. Phys.: Condens. Matter 21(17), 174204 (2009). https://doi.org/10.1088/0953-8984/21/17/174204 ADSCrossRef

Erdoğan, E., Kundakçı, M., Mantarcı, A.: InGaN thin film deposition on Si (100) and glass substrates by termionic vacuum arc. In: Journal of Physics: Conference Series 2016, vol. 1. IOP Publishing, Bristol

Fong, C.Y., Ng, S.S., Yam, F.K., Abu Hassan, H., Hassan, Z.: Growth of GaN on sputtered GaN buffer layer via low cost and simplified sol–gel spin coating method. Vacuum 119, 119–122 (2015). https://doi.org/10.1016/j.vacuum.2015.04.042 ADSCrossRef

Gu, S., Chagarov, E.A., Min, J., Madisetti, S., Novak, S., Oktyabrsky, S., Kerr, A.J., Kaufman-Osborn, T., Kummel, A.C., Asbeck, P.M.: Characterization of interface and border traps in ALD Al₂O₃/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN. Appl. Surf. Sci. 317, 1022–1027 (2014). https://doi.org/10.1016/j.apsusc.2014.09.028 ADSCrossRef

Gueddim, A., Eloud, T., Messikine, N., Bouarissa, N.: Energy levels and optical properties of GaN spherical quantum dots. Superlattices Microstruct. 77, 124–133 (2015). https://doi.org/10.1016/j.spmi.2014.11.003 ADSCrossRef

He, X.G., Zhao, D.G., Jiang, D.S., Zhu, J.J., Chen, P., Liu, Z.S., Le, L.C., Yang, J., Li, X.J., Liu, J.P., Zhang, L.Q., Yang, H.: GaN high electron mobility transistors with AlInN back barriers. J. Alloys Compd. 662, 16–19 (2016). https://doi.org/10.1016/j.jallcom.2015.12.031 CrossRef

Hughes, W.C., Jr., W.H. Rowland, Jr., Johnson, M.A.L., Fujita, S., Jr., J.W. Cook, Jr., Schetzina, J.F., Ren, J., Edmond, J.A.: Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates. J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenom. 13(4), 1571–1577 (1995). https://doi.org/10.1116/1.588189 ADSCrossRef

Hwang, D.-K., Bang, K.-H., Jeong, M.-C., Myoung, J.-M.: Effects of RF power variation on properties of ZnO thin films and electrical properties of p–n homojunction. J. Cryst. Growth 254(3), 449–455 (2003). https://doi.org/10.1016/S0022-0248(03)01205-3 ADSCrossRef

Kaufmann, N.A.K., Lahourcade, L., Hourahine, B., Martin, D., Grandjean, N.: Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth. J. Cryst. Growth 433, 36–42 (2016). https://doi.org/10.1016/j.jcrysgro.2015.06.013 ADSCrossRef

Kawwam, M., Lebbou, K.: The influence of deposition parameters on the structural quality of PLD-grown GaN/sapphire thin films. Appl. Surf. Sci. 292, 906–914 (2014). https://doi.org/10.1016/j.apsusc.2013.12.078 ADSCrossRef

Kim, H.W., Kim, N.H.: Preparation of GaN films on ZnO buffer layers by rf magnetron sputtering. Appl. Surf. Sci. 236(1–4), 192–197 (2004). https://doi.org/10.1016/j.apsusc.2004.04.029 ADSCrossRef

Kudrawiec, R., Nyk, M., Syperek, M., Podhorodecki, A., Misiewicz, J., Strek, W.: Photoluminescence from GaN nanopowder: the size effect associated with the surface-to-volume ratio. Appl. Phys. Lett. 88(18), 181916 (2006). https://doi.org/10.1063/1.2199489 ADSCrossRef

Kunie, I., Keiko, K., Naoki, O., Hajime, H., Masahiro, K., Hrvoje, P.: The effect of n- and p-type doping on coherent phonons in GaN. J. Phys.: Condens. Matter 25(20), 205404 (2013)

Kuo, D.-H., Tuan, T.T.A., Li, C.-C., Yen, W.-C.: Electrical and structural properties of Mg-doped In_xGa_1−xN (x ≤ 0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering. Mater. Sci. Eng., B 193, 13–19 (2015). https://doi.org/10.1016/j.mseb.2014.11.005 CrossRef

Kusaka, K., Hanabusa, T., Tominaga, K.: Measurement of crystal orientation and residual stress in GaN film deposited by RF sputtering with powder target. Vacuum 74(3), 613–618 (2004). https://doi.org/10.1016/j.vacuum.2004.01.034 ADSCrossRef

Lee, J.-M., Min, B.-G., Ju, C.-W., Ahn, H.-K., Lim, J.-W.: High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors. Curr. Appl. Phys. 17(2), 157–161 (2017). https://doi.org/10.1016/j.cap.2016.11.014 ADSCrossRef

Li, S., Fang, G., Long, H., Wang, H., Huang, H., Mo, X., Zhao, X.: Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction. J. Lumin. 132(7), 1642–1645 (2012). https://doi.org/10.1016/j.jlumin.2012.02.038 CrossRef

Li, L., Huang, J., Yang, W., Tang, K., Ren, B., Xu, H., Wang, L.: Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes. Surf. Coat. Technol. 307, 1024–1028 (2016). https://doi.org/10.1016/j.surfcoat.2016.08.005 CrossRef

Li, J.-S., Tang, Y., Li, Z.-T., Ding, X.-R., Li, Z.: Study on the optical performance of thin-film light-emitting diodes using fractal micro-roughness surface model. Appl. Surf. Sci. 410, 60–69 (2017). https://doi.org/10.1016/j.apsusc.2017.03.041 ADSCrossRef

Li, E., Zhao, B., Lv, S., Cui, Z., Ma, D., Li, M.: Growth mechanism, field emission and photoluminescence property of Ge-doped hexagonal cone-shaped GaN nanorods. Superlattices Microstruct. 122, 404–409 (2018). https://doi.org/10.1016/j.spmi.2018.07.002 ADSCrossRef

Liao, J.-H., Huang, H.-W., Cheng, L.-C., Liu, H.-H., Chyi, J.-I., Cai, D.-P., Chen, C.-C., Lai, K.-Y.: Yellow-emitting Si-doped GaN: favorable characteristics for intermediate band solar cells. Sol. Energy Mater. Sol. Cells 132, 544–548 (2015)CrossRef

Lin, J.-H., Huang, S.-J., Su, Y.-K., Huang, K.-W.: The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO₂ blocking layer. Appl. Surf. Sci. 354, 168–172 (2015). https://doi.org/10.1016/j.apsusc.2015.02.151 ADSCrossRef

Liu, L., Edgar, J.H.: Substrates for gallium nitride epitaxy. Mater. Sci. Eng., R Rep. 37(3), 61–127 (2002). https://doi.org/10.1016/S0927-796X(02)00008-6 CrossRef

Liu, Z., Chong, W.C., Wong, K.M., Lau, K.M.: GaN-based LED micro-displays for wearable applications. Microelectron. Eng. 148, 98–103 (2015). https://doi.org/10.1016/j.mee.2015.09.007 CrossRef

Liu, S., Wang, Q., Xiao, H., Wang, K., Wang, C., Wang, X., Ge, W., Wang, Z.: Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance. Superlattices Microstruct. 109, 194–200 (2017). https://doi.org/10.1016/j.spmi.2017.05.014 ADSCrossRef

Mantarcı, A., Gündüz, B.: A study on refractive index dispersion and optoelectronic parameters of the BCzVB OLED material by using solution method. Opt. Quant. Electron. 48(12), 547 (2016). https://doi.org/10.1007/s11082-016-0822-5 CrossRef

Mantarcı, A., Kundakçı, M.: Some of structural and morphological optimization of GaN thin film on Si(100) substrate grown by RF sputter. AIP Conf. Proc. 1833(1), 020119 (2017). https://doi.org/10.1063/1.4981767 CrossRef

Martinez-Guerrero, E., Adelmann, C., Chabuel, F., Simon, J., Pelekanos, N.T., Mula, G., Daudin, B., Feuillet, G., Mariette, H.: Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy. Appl. Phys. Lett. 77(6), 809–811 (2000). https://doi.org/10.1063/1.1306633 ADSCrossRef

Miyoshi, M., Tsutsumi, T., Kabata, T., Mori, T., Egawa, T.: Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells. Solid-State Electron. 129, 29–34 (2017). https://doi.org/10.1016/j.sse.2016.12.009 ADSCrossRef

Moon, W.H., Kim, H.J., Choi, C.H.: Molecular dynamics simulation of melting behavior of GaN nanowires. Scripta Mater. 56(5), 345–348 (2007). https://doi.org/10.1016/j.scriptamat.2006.11.013 CrossRef

Moultif, N., Divay, A., Joubert, E., Latry, O.: Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures. Eng. Fail. Anal. 81, 69–78 (2017). https://doi.org/10.1016/j.engfailanal.2017.07.014 CrossRef

Mutlu, K., Asim, M., Erman, E.: Growth and characterization of GaN thin film on Si substrate by thermionic vacuum arc (TVA). Mater. Res. Express 4(1), 016410 (2017)CrossRef

Neumayer, D.A., Ekerdt, J.G.: Growth of group III nitrides. A review of precursors and techniques. Chem. Mater. 8(1), 9–25 (1996). https://doi.org/10.1021/cm950108r CrossRef

Orak, I., Kocyigit, A., Turut, A.: The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique. J. Alloys Compd. 691, 873–879 (2017). https://doi.org/10.1016/j.jallcom.2016.08.295 CrossRef

Patterson, A.: The Scherrer formula for X-ray particle size determination. Phys. Rev. 56(10), 978–982 (1939)ADSCrossRefMATH

Qian, H., Lee, K.B., Vajargah, S.H., Novikov, S.V., Guiney, I., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxon, C.T., Humphreys, C.J., Houston, P.A.: Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. J. Cryst. Growth 459, 185–188 (2017). https://doi.org/10.1016/j.jcrysgro.2016.12.025 ADSCrossRef

Said, A., Debbichi, M., Said, M.: Theoretical study of electronic and optical properties of BN, GaN and B_xGa_1−xN in zinc blende and wurtzite structures. Optik 127(20), 9212–9221 (2016)ADSCrossRef

Saito, W., Suwa, T., Uchihara, T., Naka, T., Kobayashi, T.: Breakdown behaviour of high-voltage GaN-HEMTs. Microelectron. Reliab. 55(9), 1682–1686 (2015). https://doi.org/10.1016/j.microrel.2015.06.126 CrossRef

Sekine, T., Komatsu, Y., Iwaya, R., Kuroe, H., Kikuchi, A., Kishino, K.: Surface phonons studied by raman scattering in GaN nanostructures. J. Phys. Soc. Jpn. 86(7), 074602 (2017). https://doi.org/10.7566/JPSJ.86.074602 ADSCrossRef

Selman, A.M., Hassan, Z., Husham, M.: Structural and photoluminescence studies of rutile TiO₂ nanorods prepared by chemical bath deposition method on Si substrates at different pH values. Measurement 56, 155–162 (2014). https://doi.org/10.1016/j.measurement.2014.06.027 CrossRef

Shet, S., Yan, Y., Ravindra, N., Turner, J., Al-Jassim, M.: Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique. Appl. Surf. Sci. 270, 718–721 (2013). https://doi.org/10.1016/j.apsusc.2013.01.134 ADSCrossRef

Sheu, J.-K., Chen, P.-C., Shin, C.-L., Lee, M.-L., Liao, P.-H., Lai, W.-C.: Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption. Sol. Energy Mater. Sol. Cells 157, 727–732 (2016). https://doi.org/10.1016/j.solmat.2016.07.047 CrossRef

Shinoda, H., Mutsukura, N.: Structural properties of GaN layers grown on Al₂O₃ (0001) and GaN/Al₂O₃ template by reactive radio-frequency magnetron sputter epitaxy. Vacuum 125, 133–140 (2016). https://doi.org/10.1016/j.vacuum.2015.12.008 ADSCrossRef

Stenzel, O.: The Physics of Thin Film Optical Spectra. Springer, New York (2005)

Strite, S., Morkoc, H.J.: GaN, AlN, and InN: A review. Vac. Sci. Technol. B B10, 1237–1266 (1992)CrossRef

Sun, M., Chou, J.-P., Ren, Q., Zhao, Y., Yu, J., Tang, W.: Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN. Appl. Phys. Lett. 110(17), 173105 (2017). https://doi.org/10.1063/1.4982690 ADSCrossRef

Tang, J., Liang, T., Shi, W., Zhang, Q., Wang, Y., Liu, J., Xiong, J.: The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy. Appl. Surf. Sci. 257(21), 8846–8849 (2011)ADSCrossRef

Tauc, J., Menth, A.: States in the gap. J. Non-Cryst. Solids 8, 569–585 (1972)ADSCrossRef

Van de Walle, C.G.: Effects of impurities on the lattice parameters of GaN. Phys. Rev. B 68(16), 165209 (2003)ADSCrossRef

Wang, M., Bian, J., Sun, H., Liu, W., Zhang, Y., Luo, Y.: n-VO₂/p-GaN based nitride–oxide heterostructure with various thickness of VO₂ layer grown by MBE. Appl. Surf. Sci. 389, 199–204 (2016). https://doi.org/10.1016/j.apsusc.2016.07.109 ADSCrossRef

Wu, Y., Xue, C., Zhuang, H., Tian, D., Liu, Y.A., He, J., Sun, L., Wang, F., Ai, Y., Cao, Y.: Synthesis of GaN nanorods through ammoniating Ga₂O₃/BN thin films deposited by RF magnetron sputtering. J. Cryst. Growth 292(2), 294–297 (2006). https://doi.org/10.1016/j.jcrysgro.2006.04.012 ADSCrossRef

Xie, M.H., Seutter, S.M., Zhu, W.K., Zheng, L.X., Wu, H., Tong, S.Y.: Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy. Phys. Rev. Lett. 82(13), 2749–2752 (1999)ADSCrossRef

Xing, Z., Wang, R.X., Fan, Y.M., Wang, J.F., Zhang, B.S., Xu, K.: The effect of transparent conductive nanocrystalline oxide thin layer on performance of UV detectors fabricated on Fe-doped GaN. Mater. Sci. Semicond. Process. 57, 132–136 (2017). https://doi.org/10.1016/j.mssp.2016.10.017 CrossRef

Yang, M., Chang, B., Hao, G., Wang, H., Wang, M.: Optoelectronic properties of GaN, AlN, and GaAlN alloys. Optik 126(22), 3357–3361 (2015). https://doi.org/10.1016/j.ijleo.2015.07.096 ADSCrossRef

Yin, M.L., Zou, C.W., Li, M., Liu, C.S., Guo, L.P., Fu, D.J.: Middle-frequency magnetron sputtering for GaN growth. Nucl. Instrum. Methods Phys. Res., Sect. B 262(2), 189–193 (2007). https://doi.org/10.1016/j.nimb.2007.05.034 ADSCrossRef

You, Y.-S., Feng, S.-W., Wang, H.-C., Song, J., Han, J.: The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition. J. Lumin. 182, 196–199 (2017). https://doi.org/10.1016/j.jlumin.2016.10.039 CrossRef

Yudate, S., Fujii, T., Shirakata, S.: Structural properties of Eu-doped GaN films prepared by RF magnetron sputtering. Thin Solid Films 517(4), 1453–1456 (2008). https://doi.org/10.1016/j.tsf.2008.09.022 ADSCrossRef

Zhang, Y., Cui, Z., Ding, Y., Liu, T.: Density functional theories study on optoelectronic properties of arsenic-doped GaN nanowires. Opt. Quant. Electron. 48(12), 548 (2016). https://doi.org/10.1007/s11082-016-0824-3 CrossRef

Zhang, H., Zhang, D., Wang, W.: Improved emission of GaN-LED based on the optimized multilayered lamellar micro-gratings. J. Lumin. 192, 470–477 (2017). https://doi.org/10.1016/j.jlumin.2017.07.022 CrossRef

Titel: Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power
verfasst von: Asim Mantarcı
Mutlu Kundakçi
Publikationsdatum: 01.03.2019
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 3/2019
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-019-1795-y

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