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2012 | OriginalPaper | Buchkapitel

9. Piezo-Phototronic Effect on Photodetector

verfasst von : Zhong Lin Wang

Erschienen in: Piezotronics and Piezo-Phototronics

Verlag: Springer Berlin Heidelberg

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Abstract

An effective electron–hole separation at a Schottky contact or p–n junction is important for the efficiency of a photon detector. In this chapter, we demonstrate how the piezo-phototronic effect can be used to largely improve the responsivity of a photon detector in a whole range from visible to UV. After a systematic study on the Schottky barrier height change with tuning the strain and the excitation light intensity, an in-depth understanding is provided about the physical mechanism of the coupling of piezoelectric, optical and semiconducting properties. Our results show that the piezo-phototronic effect can enhance the detection sensitivity more than fivefold for pW levels light detection.

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Literatur
1.
Zurück zum Zitat Q. Yang, X. Guo, W.H. Wang, Y. Zhang, S. Xu, D.H. Lien, Z.L. Wang, Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect. ACS Nano 4(10), 6285–6291 (2010) CrossRef Q. Yang, X. Guo, W.H. Wang, Y. Zhang, S. Xu, D.H. Lien, Z.L. Wang, Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect. ACS Nano 4(10), 6285–6291 (2010) CrossRef
2.
Zurück zum Zitat Z.W. Pan, Z.R. Dai, Z.L. Wang, Nanobelts of semiconducting oxides. Science 291, 1947–1949 (2001) CrossRef Z.W. Pan, Z.R. Dai, Z.L. Wang, Nanobelts of semiconducting oxides. Science 291, 1947–1949 (2001) CrossRef
3.
Zurück zum Zitat J. Zhou, P. Fei, Y.D. Gu, W.J. Mai, Y.F. Gao, R.S. Yang, G. Bao, Z.L. Wang, Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires. Nano Lett. 8(11), 3973–3977 (2008) CrossRef J. Zhou, P. Fei, Y.D. Gu, W.J. Mai, Y.F. Gao, R.S. Yang, G. Bao, Z.L. Wang, Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires. Nano Lett. 8(11), 3973–3977 (2008) CrossRef
4.
Zurück zum Zitat J. Zhou, Y.D. Gu, Y.F. Hu, W.J. Mai, P.H. Yeh, G. Bao, A.K. Sood, D.L. Polla, Z.L. Wang, Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization. Appl. Phys. Lett. 94(19), 191103 (2009) CrossRef J. Zhou, Y.D. Gu, Y.F. Hu, W.J. Mai, P.H. Yeh, G. Bao, A.K. Sood, D.L. Polla, Z.L. Wang, Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization. Appl. Phys. Lett. 94(19), 191103 (2009) CrossRef
5.
Zurück zum Zitat T.Y. Wei, C.T. Huang, B.J. Hansen, Y.F. Lin, L.J. Chen, S.Y. Lu, Z.L. Wang, Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors. Appl. Phys. Lett. 96(1), 013508 (2010) CrossRef T.Y. Wei, C.T. Huang, B.J. Hansen, Y.F. Lin, L.J. Chen, S.Y. Lu, Z.L. Wang, Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors. Appl. Phys. Lett. 96(1), 013508 (2010) CrossRef
6.
Zurück zum Zitat R.R. Mehta, B.S. Sharma, Photoconductive gain greater than unity in CdSe films with Schottky barriers at the contacts. J. Appl. Phys. 44(1), 325–328 (1973) CrossRef R.R. Mehta, B.S. Sharma, Photoconductive gain greater than unity in CdSe films with Schottky barriers at the contacts. J. Appl. Phys. 44(1), 325–328 (1973) CrossRef
7.
Zurück zum Zitat S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)
8.
Zurück zum Zitat J.W. Schwede, I. Bargatin, D.C. Riley, B.E. Hardinm, S.J. Rosenthal, Y. Sun, F. Schmitt, P. Pianetta, R.T. Howe, Z. Shen, N.A. Melosh, Photon-enhanced thermionic emission for solar concentrator systems. Nat. Mater. 9, 762–767 (2010) CrossRef J.W. Schwede, I. Bargatin, D.C. Riley, B.E. Hardinm, S.J. Rosenthal, Y. Sun, F. Schmitt, P. Pianetta, R.T. Howe, Z. Shen, N.A. Melosh, Photon-enhanced thermionic emission for solar concentrator systems. Nat. Mater. 9, 762–767 (2010) CrossRef
9.
Zurück zum Zitat K.W. Chung, Z. Wang, J.C. Costa, F. Williamson, P.P. Ruden, M.I. Nathan, Barrier height change in GaAs Schottky diodes induced by piezoelectric effect. Appl. Phys. Lett. 59(10), 1191–1193 (1991) CrossRef K.W. Chung, Z. Wang, J.C. Costa, F. Williamson, P.P. Ruden, M.I. Nathan, Barrier height change in GaAs Schottky diodes induced by piezoelectric effect. Appl. Phys. Lett. 59(10), 1191–1193 (1991) CrossRef
10.
Zurück zum Zitat W. Shan, M.F. Li, P.Y. Yu, W.L. Hansen, W. Walukiewicz, Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Appl. Phys. Lett. 53(11), 974–976 (1988) CrossRef W. Shan, M.F. Li, P.Y. Yu, W.L. Hansen, W. Walukiewicz, Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Appl. Phys. Lett. 53(11), 974–976 (1988) CrossRef
11.
Zurück zum Zitat Y. Liu, Q. Yang, Y. Zhang, Y.Z. Yang, Z.L. Wang, Nanowire piezo-phototronic photodetector: theory and experimental design. Adv. Mater. 24(11), 1410–1417 (2012) CrossRef Y. Liu, Q. Yang, Y. Zhang, Y.Z. Yang, Z.L. Wang, Nanowire piezo-phototronic photodetector: theory and experimental design. Adv. Mater. 24(11), 1410–1417 (2012) CrossRef
12.
Zurück zum Zitat P.W. Bridgman, The effect of homogeneous mechanical stress on the electrical resistance of crystals. Phys. Rev. 42(6), 858–863 (1932) CrossRef P.W. Bridgman, The effect of homogeneous mechanical stress on the electrical resistance of crystals. Phys. Rev. 42(6), 858–863 (1932) CrossRef
13.
Zurück zum Zitat C.S. Smith, Piezoresistance effect in germanium and silicon. Phys. Rev. 94(1), 42–49 (1954) CrossRef C.S. Smith, Piezoresistance effect in germanium and silicon. Phys. Rev. 94(1), 42–49 (1954) CrossRef
14.
Zurück zum Zitat H. Norde, A modified forward I–V plot for Schottky diodes with high series resistance. J. Appl. Phys. 50(7), 5052–5053 (1979) CrossRef H. Norde, A modified forward IV plot for Schottky diodes with high series resistance. J. Appl. Phys. 50(7), 5052–5053 (1979) CrossRef
15.
Zurück zum Zitat C.D. Lien, F.C.T. So, M.A. Nicolet, An improved forward I–V method for nonideal Schottky diodes with high series resistance. IEEE Trans. Electron Devices 31, 1502–1503 (1984) CrossRef C.D. Lien, F.C.T. So, M.A. Nicolet, An improved forward IV method for nonideal Schottky diodes with high series resistance. IEEE Trans. Electron Devices 31, 1502–1503 (1984) CrossRef
Metadaten
Titel
Piezo-Phototronic Effect on Photodetector
verfasst von
Zhong Lin Wang
Copyright-Jahr
2012
Verlag
Springer Berlin Heidelberg
DOI
https://doi.org/10.1007/978-3-642-34237-0_9

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