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2013 | Buch

Introduction Kapitel lesen Erstes Kapitel lesen

Piezoresistor Design and Applications

verfasst von: Joseph C. Doll, Beth L. Pruitt

Verlag: Springer New York

Buchreihe : Microsystems and Nanosystems

Enthalten in: Springer Professional "Wirtschaft+Technik" , Springer Professional "Technik"

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Über dieses Buch

Piezoresistor Design and Applications provides an overview of these MEMS devices and related physics. The text demonstrates how MEMS allows miniaturization and integration of sensing as well as efficient packaging and signal conditioning. This text for engineers working in MEMS design describes the piezoresistive phenomenon and optimization in several applications. Includes detailed discussion of such topics as; coupled models of mechanics, materials and electronic behavior in a variety of common geometric implementations including strain gages, beam bending, and membrane loading. The text concludes with an up-to-date discussion of the need for integrated MEMS design and opportunities to leverage new materials, processes and MEMS technology.

Piezoresistor Design and Applications is an ideal book for design engineers, process engineers and researchers.

Inhaltsverzeichnis

Frontmatter
Chapter 1. Introduction
Abstract
Piezoresistive sensors were among the earliest micromachined silicon devices. The exceptionally large change in resistivity of strained silicon and germanium was first discovered in 1954 by Charles Smith at Bell Laboratories. Since then, researchers have produced increasingly complex piezoresistive strain gauges, pressure sensors, accelerometers and force/displacement sensors, including many commercially successful products. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). Today, piezoresistive sensors comprise a substantial portion of the MEMS sensors market and are found in everything from automobiles to smartphones to interstellar probes.
Joseph C. Doll, Beth L. Pruitt
Chapter 2. Piezoresistance Fundamentals
Abstract
The core concepts for piezoresistive sensing will be presented in this chapter. We will open by discussing resistive strain sensing in general before moving on to the piezoresistive effect in particular. Variation in piezoresistive coefficients with crystallographic orientation, dopant concentration, strain and temperature will be considered, with an emphasis on accurate analytical models for each effect. We will close by presenting the transduction and signal conditioning approaches that can be used to transduce a resistance change into a usable signal.
Joseph C. Doll, Beth L. Pruitt
Chapter 3. Sensitivity, Noise and Resolution
Abstract
In this chapter we will develop models for calculating the noise, sensitivity and resolution of arbitrary piezoresistive sensors. Sensor resolution is defined as the smallest signal that can be reliably detected. The minimum detectable signal without averaging multiple trials is commonly equated to the root mean square (RMS) noise of the measurand according to
$$\begin{aligned} {\mathrm {Resolution}} = \frac{V_\mathrm{noise}}{S} \nonumber \end{aligned}$$
where \(V_{\text {noise}}\) is the RMS voltage noise and \(S\) is the voltage-referred sensitivity with respect to the measurand (e.g. force, displacement or pressure) of the sensor.
Joseph C. Doll, Beth L. Pruitt
Chapter 4. Fabrication and Process Modeling
Abstract
A necessary precondition for successful piezoresistor design is an accurate model for the fabrication process. In particular, we require a model that can predict the dopant concentration profile of the piezoresistor in terms of fabrication input parameters (e.g. predeposition time and temperature). The dopant concentration profile determines the charge carrier and electrical resistivity profiles. As we saw in the last section, these quantities determine the noise, sensitivity and resolution of a sensor. This chapter will focus on accurately modeling the most common piezoresistor fabrication techniques.
Joseph C. Doll, Beth L. Pruitt
Chapter 5. Temperature Effects
Abstract
Silicon piezoresistors are exceptionally sensitive to temperature. Fluctuations in temperature affect both the sensor output (via the resistance) and sensitivity (via the piezoresistance factor). Without any temperature compensation the temperature-induced signal during typical operation can be larger than the intended sensor output.
Joseph C. Doll, Beth L. Pruitt
Chapter 6. Design Optimization
Abstract
The design of a typical piezoresistive sensor is specified by at least a dozen separate parameters, such as bias voltage and piezoresistor length. Design optimization is the process of selecting the single most optimal design from this enormous parameter space by employing models to predict device performance for each unique combination of design parameters. Piezoresistor design is complicated by the large number of design parameters and degree of nonlinear coupling between the parameters, design constraints and overall performance. This chapter will summarize the basic design tradeoffs and present numerical optimization as a robust approach to designing optimized piezoresistive sensors.
Joseph C. Doll, Beth L. Pruitt
Chapter 7. Alternative Materials and Transduction Methods
Abstract
Piezoresistive silicon sensors are widely used but they face competition in every sensor application from alternative materials and transduction techniques. New materials allow piezoresistive sensors to operate in places where they otherwise could not, while alternative transduction methods provide different tradeoffs in sensor performance, power dissipation and size. In this chapter we will explore the strengths and weaknesses of the most common alternatives to silicon piezoresistors.
Joseph C. Doll, Beth L. Pruitt
Backmatter
Metadaten
Titel
Piezoresistor Design and Applications
verfasst von
Joseph C. Doll
Beth L. Pruitt
Copyright-Jahr
2013
Verlag
Springer New York
Electronic ISBN
978-1-4614-8517-9
Print ISBN
978-1-4614-8516-2
DOI
https://doi.org/10.1007/978-1-4614-8517-9

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