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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 5/2016

29.01.2016

Preparation of ScAlN films as a function of sputtering atmosphere

verfasst von: JiaLin Tang, Dongwei Niu, Yixi Yang, Dong Zhou, Chengtao Yang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2016

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Abstract

Sc doped AlN films were deposited by dc reactive magnetron sputtering on (100) p-type silicon substrates mixed with Ar–N2 gas atmosphere. It is appropriate for a wide variety of applications for the excellent piezoelectric properties, which closely depends on their crystal structures and morphological properties. In this paper, we research the influence of sputtering atmosphere including nitrogen proportion from 30 to 60 % and pressure from 0.4 to 0.8 Pa on sputtering rate, crystal quality and electric properties. It indicated that the sputtering rate strongly relied on the condition atmosphere, decreasing with increasing of pressure and nitrogen proportion. The best c-axis oriented ScAlN film could be prepared at low pressure of 0.4 Pa and reasonable nitrogen proportion of 35 %, presenting full width at half maximum of 1.7°. Moreover, the results found that the electric properties are demonstrated closely depending on the crystal quality, too.
Vorheriger Artikel Realization of polarization-angle-independent fishnet-based waveguide metamaterial comprised of octagon shaped resonators with sensor and absorber applications
Nächster Artikel Simple, novel and low-temperature synthesis of rod-like NiO nanostructure via thermal decomposition route using a new starting reagent and its photocatalytic activity assessment

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Metadaten
Titel
Preparation of ScAlN films as a function of sputtering atmosphere
verfasst von
JiaLin Tang
Dongwei Niu
Yixi Yang
Dong Zhou
Chengtao Yang
Publikationsdatum
29.01.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 5/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-4359-y

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