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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2013

01.11.2013

Quantum confinement effects in Gd-doped CdS nanoparticles prepared by chemical precipitation technique

verfasst von: M. Thambidurai, N. Muthukumarasamy, Dhayalan Velauthapillai, Changhee Lee

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2013

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Abstract

CdS and Gd-doped CdS nanoparticles have been synthesized by chemical precipitation technique. The X-ray diffraction patterns show that the CdS and Gd-doped CdS nanoparticles exhibit hexagonal structure. The high resolution transmission electron microscope image shows that CdS and Gd-doped CdS nanoparticles have particle size lying in the range of 3.5 to 4.0 nm. Raman spectra show that 1LO, 2LO and 3LO peaks of the Gd-doped CdS nanoparticles are slightly shifted to lower wavenumber side when compared to that of CdS. Optical absorption spectra of Gd-doped CdS nanoparticles shows that absorption edge is slightly shifted towards longer wavelength side (red shift) when compared to that of CdS and this shift is due to the quantum confinement effect present in the samples.
Vorheriger Artikel Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se2 thin-film absorbers
Nächster Artikel Effect of annealing temperature on the energy transfer in Eu-doped ZnO nanoparticles by chemical precipitation method

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Metadaten
Titel
Quantum confinement effects in Gd-doped CdS nanoparticles prepared by chemical precipitation technique
verfasst von
M. Thambidurai
N. Muthukumarasamy
Dhayalan Velauthapillai
Changhee Lee
Publikationsdatum
01.11.2013
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2013
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1438-1

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