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Erschienen in:
01.10.2014
Raman, photoluminescence analysis on Cu(InAl)Se2 thin films and the fabrication of Cu(InAl)Se2 based thin film solar cells
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2014
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Abstract
Cu(InAl)Se2 (CIAS) thin films have been prepared by chemical bath deposition technique. Thickness of the prepared films has been measured by gravimetric technique. The structure, composition and optical transition as well as bandgap have been estimated by X-ray diffraction, energy dispersive X-ray analysis and spectrophotometer analysis. Raman analysis has been made on the prepared CIAS thin films to assign the fundamental lattice mode and to confirm the films crystallinity and stoichiometry. PL analysis has been carried out to find the effective mass of holes and electron, dielectric constant, the involved defects and their activation energy. Cu(InAl)Se2-based solar cells with different types of buffer layers such as CdS, CdS:Cu, CdS:In were fabricated. The current and voltage were measured using an optical power meter and an electrometer and the fabricated solar cells were illuminated using 100 mW/cm2 white light under AM1 conditions.