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2019 | OriginalPaper | Buchkapitel

11. Ramp-to-Failure Testing

verfasst von : J. W. McPherson

Erschienen in: Reliability Physics and Engineering

Verlag: Springer International Publishing

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Abstract

Engineers are constantly confronted with time issues. Applying a constant stress and waiting for failure can be very time-consuming. Thus, it is only natural to ask the question—does a rapid time-zero test exist that can be used on a routine sampling basis to monitor the reliability of the materials/devices? The answer to this question is often yes and it is called the ramp-to-failure test. While the test is destructive in nature (one has to sacrifice materials/devices), it is generally much more rapid than conventional constant-stress time-to-failure tests. The relative quickness of the test also enables the gathering of more data and thus the gathering of better statistics.

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Fußnoten
1
One should always question the existence of a yield stress ξyield. Some materials have a yield stress, some do not. Even if a material has a reported yield point, a slight crack/defect existing in the material may have an adverse impact on the yield point. The stress riser at the crack-tip/defect may produce a local stress in the material well above the yield stress. Degradation would now be expected even though the average stress may be below ξyield.
 
2
Generally, the slower the ramp rate, the closer the ramp test results will match actual constant-stress time-to-failure results.
 
3
Reminder—any cum fraction F can be used to determine β provided that the corresponding ξbd (F%) is also used. If one chooses to use F = 0.1, then β = 2.25/{γ [ξbd(63 %) - ξbd(10 %)]}.
 
4
If one uses F = 0.1 then β = 2.25/{(n + 1)ln[ξbd(63%)/ξbd(10%)]}.
 
Literatur
Zurück zum Zitat Anolick, E. and G. Nelson: Low-Field Time-Dependent Dielectric Breakdown, IEEE International Reliability Symposium Proceedings, 8 (1979). Anolick, E. and G. Nelson: Low-Field Time-Dependent Dielectric Breakdown, IEEE International Reliability Symposium Proceedings, 8 (1979).
Zurück zum Zitat Berman, A.: Time-Zero Dielectric Breakdown by a Ramp Method, IEEE International Reliability Symposium Proceedings, 204 (1981). Berman, A.: Time-Zero Dielectric Breakdown by a Ramp Method, IEEE International Reliability Symposium Proceedings, 204 (1981).
Zurück zum Zitat McPherson, J.: Stress-Dependent Activation Energy, IEEE International Reliability Symposium Proceedings, 12 (1986). McPherson, J.: Stress-Dependent Activation Energy, IEEE International Reliability Symposium Proceedings, 12 (1986).
Metadaten
Titel
Ramp-to-Failure Testing
verfasst von
J. W. McPherson
Copyright-Jahr
2019
DOI
https://doi.org/10.1007/978-3-319-93683-3_11

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