2004 | OriginalPaper | Buchkapitel
RF Parameter Extraction for HEMTs and HBTs
verfasst von : Dr. techn.Dipl.-Ing. Vassil Palankovski, Dr. techn.Dipl.-Phys. Rüdiger Quay
Erschienen in: Analysis and Simulation of Heterostructure Devices
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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This chapter addresses the extraction of RF quantities such as Y- and related parameters, derived quantities such as stability factors and cut-off frequencies, and, last but not least, small-signal equivalent circuit elements for various topologies. It further provides a view of the physical understanding of the bias dependence of small-signal equivalent circuit elements in HEMTs and HBTs in analytcial models and TCAD approaches.