Ausgabe 1/2011
Inhalt (23 Artikel)
Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers
P. G. Kasherininov, A. A. Tomasov, E. V. Beregulin
Chlorine adsorption on the InAs (001) surface
A. V. Bakulin, S. V. Eremeev, O. E. Tereshchenko, S. E. Kulkova
The influence of γ-ray radiation on electrical properties of CuGaSe2
I. Kasumoglu, T. G. Kerimova, I. A. Mamedova
Grain boundary related electrical transport in Al-rich Al x Ga1 − x N layers grown by metal-organic chemical vapor deposition
A. Yildiz, P. Tasli, B. Sarikavak, S. B. Lisesivdin, M. K. Ozturk, M. Kasap, S. Ozcelik, E. Ozbay
Features of the charge-transport mechanism in layered Bi2Te3 single crystals doped with chlorine and terbium
N. A. Abdullaev, N. M. Abdullaev, H. V. Aliguliyeva, T. G. Kerimova, G. S. Mehdiyev, S. A. Nemov
On the resonant donor level in n-CdTe according to data on electron transport under hydrostatic pressure
M. I. Daunov, A. S. Kovalev, A. Yu. Mollaev, A. B. Magomedov
A thermally induced junction between impurity-conduction and intrinsic-conduction regions
M. M. Gadjialiev, I. K. Kamilov, Z. Sh. Pirmagomedov
Conductivity of Hg3In2Te6 crystals in high electric fields
O. G. Grushka, S. M. Chupyra, O. M. Myslyuk, S. V. Bilichuk, I. I. Zabolotsky
Current-voltage characteristics of ZnGa2Se4 compound polycrystals
B. G. Tagiev, O. B. Tagiev, S. G. Asadullayeva
The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite
A. V. Nezhdanov, D. O. Filatov, D. A. Antonov, S. Yu. Zubkov, A. I. Mashin, A. V. Ershov
Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission
A. V. Zinovchuk, A. K. Tkachenko
On the maximum thickness of the space-charge region of reverse biased p +-n junctions with a positive bevel
A. S. Kyureguan
the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics
N. A. Torkhov, V. A. Novikov
On the nature of electroluminescence at 1.5 μm in the breakdown mode of reverse-biased Er-doped silicon p-n-junction structures grown by sublimation molecular beam epitaxy
A. V. Kornaukhov, A. A. Ezhevskii, M. O. Marychev, D. O. Filatov, V. G. Shengurov
Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces
Ákos Nemcsics, Jenö Takács
Type-I semiconductor heterostructures with an indirect-gap conduction band
T. S. Shamirzaev
Temperature-dependent excitonic absorption in long-period multiple In x Ga1 − x As/GaAs quantum well structures
S. A. Vaganov, R. P. Seisyan
Electron-electron interaction and spin-orbit coupling in InAs/AlSb heterostructures with a two-dimensional electron gas
V. I. Gavrilenko, S. S. Krishtopenko, M. Goiran
Electrical, optical, and mechanical properties of amorphous hydrogenated carbon obtained under various deposition conditions
A. A. Babaev, S. B. Sultanov, M. Sh. Abdulvagabov, E. I. Terukov
Influence of dislocations on the process of pore formation in n-InP (111) single crystals
Y. A. Suchikova, V. V. Kidalov, G. A. Sukach
The effect of thermal annealing on the structure of nanocrystalline zinc sulfide films
P. N. Krylov, E. A. Romanov, I. V. Fedotova
Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
V. P. Kuznetsov, V. B. Shmagin, M. N. Drozdov, M. O. Marychev, K. E. Kudryavtsev, M. V. Kuznetsov, B. A. Andreev, A. V. Kornaukhov, Z. F. Krasilnik
The effect of neutron irradiation and annealing temperature on the electrical properties and lattice constant of epitaxial gallium nitride layers
V. M. Boyko, S. S. Verevkin, N. G. Kolin, A. V. Korulin, D. I. Merkurisov, A. Y. Polyakov, V. A. Chevychelov