Ausgabe 10/2000
Inhalt (26 Artikel)
Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1−x Gex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4
L. K. Orlov, N. L. Ivina, A. V. Potapov
Hot-electron capture by negatively charged centers in an approximation of quasi-elastic scattering
Z. S. Kachlishvili, N. K. Metreveli
A verification of the applicability of the monovalent-defect model to the description of properties of the vacancy-oxygen complex in silicon
L. F. Makarenko
Space-charge-limited currents in a synthetic semiconducting diamond
Yu. A. Detchuev, V. A. Kryachkov, É. G. Pel’, N. G. Sanzharlinskii
Optical properties of Ca4Ga2S7:Eu2+
B. G. Tagiev, U. F. Kasumov, N. N. Musaeva, R. B. Dzhabbarov, A. S. Abushov
Dielectric properties of Cd1−x FexSe compounds
P. V. Žukowski, J. Partyka, P. Wagierek, Yu. Shostak, Yu. Sidorenko, A. Rodzik
Luminescent ZnS:Cu films prepared by chemical methods
S. V. Svechnikov, L. V. Zav’yalova, N. N. Roshchina, V. E. Rodionov, V. S. Khomchenko, L. I. Berezhinskii, I. V. Prokopenko, P. M. Litvin, O. S. Litvin, Yu. V. Kolomzarov, Yu. A. Tsyrkunov
Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
A. A. Lebedev, D. V. Davydov, N. S. Savkina, A. S. Tregubova, M. P. Shcheglov, R. Yakimova, M. Syväjärvi, E. Janzén
Special features of photoelectric properties of p-CdxHg1−x Te crystals at low temperatures: The effects of the freezing-out of holes and elastic stress
S. G. Gasan-Zade, S. V. Staryi, M. V. Strikha, G. A. Shepel’skii
Instability of DX-like impurity centers in PbTe:Ga at annealing
D. E. Dolzhenko, V. N. Demin, I. I. Ivanchik, D. R. Khokhlov
Effect of doping with gadolinium on the physical properties of Hg3In2Te6
O. G. Grushka, P. M. Gorlei, A. V. Bestsennyi, Z. M. Grushka
Comparison of the polarizations of the 1.2-eV photoluminescence band in n-GaAs:Te under uniaxial pressure and resonance polarized excitation
A. A. Gutkin, M. A. Reshchikov, V. E. Sedov
Evolution of the density of states during phase transitions in films of cadmium sulfotellurides synthesized under profoundly nonequilibrium conditions
A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin
Band gap estimation for a triaminotrinitrobenzene molecular crystal by the density-functional method
K. F. Grebenkin, A. L. Kutepov
Static and high-frequency transverse electrical conductivity of isotypical silicon structures obtained by direct bonding
V. A. Stuchinskii, G. N. Kamaev
Influence of an electric field on the strained state of a heterostructure
R. M. Peleshchak, B. A. Lukiyanets, G. G. Zegrya
Effect of low-temperature interphase charge transport at the Si/SiO2 interface on the photoresponse of silicon barrier structures
N. I. Bochkareva, S. A. Khorev
A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics
R. B. Dzhanelidze, M. B. Dzhanelidze, M. R. Katsiashvili
ZnMgSe/ZnCdSe-based distributed bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates
V. I. Kozlovskii, P. A. Trubenko, Yu. V. Korostelin, V. V. Roddatis
On the theory of photoionization of deep-level impurity centers in a parabolic quantum well
V. D. Krevchik, R. V. Zaitsev, V. V. Evstifeev
Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide
K. S. Zhuravlev, A. Yu. Kobitsky
Anomalous dispersion, differential gain, and dispersion of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well semiconductor lasers
A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, V. P. Konyaev
An artificially anisotropic thermoelectric material with semiconducting and superconducting layers
D. A. Pshenai-Severin, Yu. I. Ravich, M. V. Vedernikov
Injection currents in silicon structures with blocked hopping conduction
D. G. Esaev, S. P. Sinitsa
Charge transport mechanism and photoelectric characteristics of n +-Si-n-Si-Al2O3-Pd diode structures
S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu