Ausgabe 10/2008
Inhalt (19 Artikel)
Parameters of vacancies’ formation in the carbon-subgroup crystals
M. N. Magomedov
Effect of a phase transition on the electron energy spectrum in Ag2S
F. F. Aliev, M. B. Jafarov, B. A. Tairov, G. P. Pashaev, A. A. Saddinova, A. A. Kuliev
Autosolitons in bistable system of silicon with deep impurity levels
A. M. Musaev
Mössbauer U − centers as tools for studying the Bose condensation in semiconductors
G. A. Bordovskiĭ, S. A. Nemov, A. V. Marchenko, P. P. Seregin, A. V. Zaĭtseva
Lorentz number and Hall factor in degenerate semiconductors during resonance scattering of charge carriers
L. V. Prokof’eva, A. A. Shabaldin, V. A. Korchagin, S. A. Nemov, Yu. I. Ravich
Specific features of the generation-recombination properties of bistable defects in semiconductors: Manifestation in Hoffmann’s function
A. G. Nikitina, V. V. Zuev
Examination of properties of epitaxial and bulk gallium antimonide
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, A. S. Vlasov, E. P. Rakova, V. M. Andreev
Consideration of spontaneous polarization in the problem of NH-SiC/3C-SiC/NH-SiC heterostructures formed by cubic (3C) and hexagonal (NH) silicon carbide polytypes
S. Yu. Davydov, A. V. Troshin
Exciton states and photoluminescence of silicon and germanium nanocrystals in an Al2O3 matrix
I. M. Kupchak, Yu. V. Kryuchenko, D. V. Korbutyak, A. V. Sachenko, É. B. Kaganovich, É. G. Manoĭlov, É. V. Begun
Effect of potential fluctuations on the energy structure of GaAs/AlGaAs quantum wells with A+ centers
P. V. Petrov, Yu. L. Ivánov, V. S. Mikhrin, A. E. Zhukov
Effect of impurities on the steady component of the current in a quantum wire under the joint action of ac and dc fields
D. V. Zav’yalov, S. V. Kryuchkov
Ab initio calculations of phonon spectra of (GaP) n (AlP) m superlattices
A. V. Kosobutskiĭ, E. N. Malysheva
Photophysical properties of silicon-containing poly[salicylidene azomethine]s
E. L. Alexandrova, A. G. Ivanov, N. M. Geller, L. B. Nadezhdina, V. V. Shamanin
Comparative analysis of limiting photoconversion efficiency of usual solar cells and solar cells with quantum wells
A. V. Sachenko, I. O. Sokolovskiĭ
Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots
A. M. Nadtochiy, S. A. Blokhin, A. V. Sakharov, M. M. Kulagina, Yu. M. Zadiranov, N. Yu. Gordeev, M. V. Maksimov, V. M. Ustinov, N. N. Ledentsov, E. Stock, T. Warming, D. Bimberg
Highly sensitive submillimeter InSb photodetectors
Yu. B. Vasilyev, A. A. Usikova, N. D. Il’inskaya, P. V. Petrov, Yu. L. Ivanov
Properties of waveguide modes in a photon crystal based on slotted silicon with a defect
A. S. Spitsyn, G. F. Glinskiĭ
Specific features of the effect of irradiation with electrons and neutrons on photoelectric properties of CdS single crystals nominally undoped and doped with Cu
H. Ye. Davidyuk, V. V. Bozhko, L. V. Bulatetska
Catalytic properties of composite amorphous carbon-platinum layers in fuel cells
A. A. Nechitaĭlov, T. K. Zvonareva, A. D. Remenyuk, V. A. Tolmachev, D. N. Goryachev, O. S. El’tsina, L. V. Belyakov, O. M. Sreseli