Ausgabe 10/2011
Inhalt (24 Artikel)
Optical spectra of six silicon phases
V. V. Sobolev, V. Val. Sobolev, S. V. Shushkov
Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure
A. R. Degheidy, E. B. Elkenany
Structure and magnetic properties of InSe single crystals intercalated by nickel
I. M. Stakhira, N. K. Tovstyuk, V. L. Fomenko, V. M. Tsmots, A. N. Shchupliak
Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov
Band gap of CdTe and Cd0.9Zn0.1Te crystals
L. A. Kosyachenko, V. M. Sklyarchuk, O. V. Sklyarchuk, O. L. Maslyanchuk
The effect of Sn impurity on the optical and structural properties of thin silicon films
V. V. Voitovych, V. B. Neimash, N. N. Krasko, A. G. Kolosiuk, V. Yu. Povarchuk, R. M. Rudenko, V. A. Makara, R. V. Petrunya, V. O. Juhimchuk, V. V. Strelchuk
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
H. Altuntas, S. Altindal, S. Corekci, M. K. Ozturk, S. Ozcelik
Main features of photostimulated ion transport in heterojunctions based on mixed ion-electron (hole) conductors and the model of a thin-film ion accelerator
A. I. Stetsun, L. A. Dvorina
Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrate
A. P. Belyaev, V. P. Rubets, V. V. Antipov, E. O. Eremina
Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers
V. F. Agekyan, P. O. Holz, G. Karczewski, V. N. Katz, E. S. Moskalenko, A. Yu. Serov, N. G. Filosofov
A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. Korol’kov, N. Sleptsuk
Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions
G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin, V. G. Kesler, V. A. Volodin
Photoelectric properties of porous GaN/SiC heterostructures
M. G. Mynbaeva, A. A. Sitnikova, K. D. Mynbaev
Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density
R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, R. A. Lunin, V. A. Kulbachinskii
Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures
A. N. Semenov, B. Ya. Meltser, V. A. Solov’ev, T. A. Komissarova, A. A. Sitnikova, D. A. Kirylenko, A. M. Nadtochyi, T. V. Popova, P. S. Kop’ev, S. V. Ivanov
Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature
M. M. Grigoryev, E. V. Ivanov, K. D. Moiseev
Photophysical and electrical properties of polyphenylquinolines containing carbazole or indolo[3,2-b]carbazole fragments as new optoelectronic materials
V. M. Svetlichnyi, E. L. Aleksandrova, L. A. Myagkova, N. V. Matyushina, T. N. Nekrasova, R. Yu. Smyslov, A. R. Tameev, S. N. Stepanenko, A. V. Vannikov, V. V. Kudryavtsev
Tin impurity centers in glassy germanium chalcogenides
G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko, P. P. Seregin, E. I. Terukov
Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures
V. G. Tikhomirov, N. A. Maleev, A. G. Kuzmenkov, Yu. V. Solov’ev, A. G. Gladyshev, M. M. Kulagina, V. E. Zemlyakov, K. V. Dudinov, V. B. Yankevich, A. V. Bobyl, V. M. Ustinov
Simulation of optical properties of silicon solar cells textured with penetrating V-shaped grooves
G. G. Untila, A. P. Palov, A. Yu. Poroykov, T. V. Rakhimova, Yu. A. Mankelevich, T. N. Kost, A. B. Chebotareva, V. V. Dvorkin
Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov, A. D. Bondarev, L. S. Vavilova, I. S. Tarasov
On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures
A. M. Ivanov, A. V. Sadokhin, N. B. Strokan, A. A. Lebedev
I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
P. A. Ivanov, I. V. Grekhov, O. I. Kon’kov, A. S. Potapov, T. P. Samsonova, T. V. Semenov
Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers
S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A. L. Stankevich, A. Y. Leshko, N. A. Pikhtin, V. V. Zabrodskiy, I. S. Tarasov