Ausgabe 11/2007
Inhalt (20 Artikel)
Mechanisms of current flow in metal-semiconductor ohmic contacts
T. V. Blank, Yu. A. Gol’dberg
Large-magnitude spin polarization of electrons in an InAs-based diode structure
Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Usikova, A. A. Toropov, V. A. Solov’ev, S. V. Ivanov
Cathodoluminescence from dilute GaN x As1−x solutions (x ≤ 0.03)
P. N. Brunkov, A. A. Gutkin, M. V. Zamoryanskaya, V. S. Khrustalev
Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level
N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii
Properties of CuIn3Se5 crystals and In/CuIn3Se5 structures
I. V. Bodnar’, V. Yu. Rud’, Yu. V. Rud’
Barrier-height measurement for a gallium arsenide metal-semi-insulator interface
G. I. Ayzenshtat, M. A. Lelekov, O. P. Tolbanov
Erbium ion electroluminescence in p ++/n +/n-Si:Er/n ++ silicon diode structures
V. P. Kuznetsov, D. Yu. Remizov, V. B. Shmagin, K. E. Kudryavtsev, V. N. Shabanov, S. V. Obolensky, O. V. Belova, M. V. Kuznetsov, A. V. Kornaukhov, B. A. Andreev, Z. F. Krasil’nik
Transport properties of two-dimensional hole gas in a Ge1−x Si x /Ge/Ge1−x Si x quantum well in the vicinity of metal-insulator transition
Yu. G. Arapov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin, S. V. Gudina, I. V. Karskanov, O. A. Kuznetsov, A. de Visser, L. Ponomarenko
Excition states in semiconductor quantum dots in the modified effective mass approximation
S. I. Pokutnyĭ
Integer quantum Hall effect and correlated disorder
A. A. Greshnov, G. G. Zegrya
Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix
A. A. Gutkin, P. N. Brunkov, S. G. Konnikov
Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells
S. V. Zaitsev, M. K. Welsch, A. Forchel, G. Bacher
CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor
I. V. Sedova, O. G. Lyublinskaya, S. V. Sorokin, A. A. Sitnikova, A. A. Toropov, F. Donatini, Si Le Dang, S. V. Ivanov
Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping
D. A. Palenov, D. M. Zhigunov, O. A. Shalygina, P. K. Kashkarov, V. Yu. Timoshenko
Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers
M. V. Shaleev, A. V. Novikov, A. N. Yablonskiĭ, O. A. Kuznetsov, Yu. N. Drozdov, D. N. Lobanov, Z. F. Krasil’nik
Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions
I. A. Belogorokhov, E. V. Tikhonov, M. O. Breusova, V. E. Pushkarev, A. V. Zoteev, L. G. Tomilova, D. R. Khokhlov
Frequency shift in a system of two laser diodes
A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, V. Ya. Aleshkin, V. I. Gavrilenko, K. V. Marem’yanin, S. V. Morozov, V. V. Kocharovskii, Vl. V. Kocharovskii
Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C
S. A. Karandashev, B. A. Matveev, M. A. Remennyi, A. A. Shlenskii, L. S. Lunin, V. I. Ratushnyi, A. V. Koryuk, N. G. Tarakanova
Two-band combined model of a resonant tunneling diode
I. I. Abramov, I. A. Goncharenko, N. V. Kolomeitseva
Specific features of dynamic injection and base layer modulation processes in power n +-p-p + diodes
T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, S. N. Yurkov