Ausgabe 3/1998
Inhalt (28 Artikel)
Growth characteristics and physical properties of PbTe/BaF2 prepared under nonequilibrium conditions
S. V. Plyatsko
On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons
V. P. Klad’ko, S. V. Plyatsko
On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation
M. S. Yunusov, M. Karimov, B. L. Oksengendler
Tin telluride based thermoelectrical alloys
V. P. Vedeneev, S. P. Krivoruchko, E. P. Sabo
Lock-in-phase analysis of n-GaAs photoreflectance spectra
A. V. Ganzha, R. V. Kus’menko, W. Kircher, J. Schreiber, S. Hildebrandt
Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence
T. I. Voronina, B. E. Dzhurtanov, T. S. Lagunova, M. A. Sipovskaya, V. V. Sherstnev, Yu. P. Yakovlev
Low-frequency noise in n-GaN
N. V. D’yakonova, M. E. Levinshtein, S. Contreras, W. Knap, B. Beaumont, P. Gibart
Equation of state of an electron gas and theory of the thermal voltage in a quantizing magnetic field
B. M. Askerov, M. M. Machmudov, Kh. A. Gasanov
Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity
A. N. Kabaldin, V. B. Neimash, V. M. Tsmots’, V. S. Shtym
Role of light fluctuations in the appearance of the bistability of the photocarrier distribution
Yu. V. Gudyma, D. D. Nikirsa
Laser-modulated epitaxy of lead telluride
S. V. Plyatsko
Optical properties of crystals of the solid solutions (InSb)1−x (CdTe)x
V. A. Brodovoi, N. G. Vyalyi, L. M. Knorozok
Effect of metastable states on the de-excitation of excitons in n-GaAs
V. V. Krivolapchuk, N. K. Poletaev
Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region
S. A. Nemov, Yu. I. Ravich, V. I. Proshin, T. G. Abaidulina
Local neutrality and pinning of the chemical potential in III–V solid solutions: Interfaces and radiation effects
V. N. Brudnyi, S. N. Grinyev
Two-and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals
V. A. Pogrebnyak, D. D. Khalameida, V. M. Yakovenko, I. M. Rarenko
Preparation and photosensitivity of heterostructures based on anodized silicon carbide
A. A. Lebedev, A. A. Lebedev, Yu. V. Rud’, V. Yu. Rud’
Properties of periodic α-Si:H/a-SiNx:H structures obtained by nitridization of amorphoussilicon layers
D. I. Bilenko, O. Ya. Belobrovaya, Yu. N. Galishnikova, É. A. Zharkova, N. P. Kazanova, O. Yu. Koldobanova, E. I. Khasina
Ionization of impurity centers in a semiconductor quantum superlattice by nonlinear electromagnetic waves
S. V. Kryuchkov, K. A. Popov
Harmonics generation in quantum-size structures in a strong electromagnetic field
V. V. Kapaev, A. E. Tyurin
Effect of the charge state of defects on the light-induced kinetics of the photoconductivity of amorphous hydrated silicon
O. A. Golikova
Effect of ion irradiation of amorphous-silicon films on their crystallization
N. V. Bakhtina, A. I. Mashin, A. P. Pavlov, E. A. Pitirimova
Photosensitivity of porous silicon-layered III–VI semiconductors heterostructures
A. A. Lebedev, Yu. V. Rud’, V. Yu. Rud’
Magnetic-resonance spectroscopy of porous quantum-size structures
A. I. Mamykin, V. A. Moshnikov, A. Yu. Il’in
Properties of p +-n structures with a buried layer of radiation-induced defects
A. M. Ivanov, N. B. Strokan, V. B. Shuman
Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination
S. V. Zaitsev, A. M. Georgievskii
Current-voltage characteristics of GaN and AlGaN p-i-n diodes
N. I. Kuznetsov, K. G. Irvine
Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, V. V. Sherstnev, Yu. P. Yakovlev