Ausgabe 5/2010
Inhalt (24 Artikel)
Optical and dielectric characteristics of the rare-earth metal oxide Lu2O3
S. V. Ordin, A. I. Shelykh
Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition
V. A. Mayorov, A. M. Yafaysov, V. B. Bogevolnov, V. F. Radanstev
Specific features of the luminescence and conductivity of zinc selenide on exposure to X-ray and optical excitation
V. Ya. Degoda, A. O. Sofienko
The role of underbarrier transitions in processes of annihilation of excess charge carriers in II–VI semiconductors
G. F. Novikov, E. V. Rabenok, M. V. Gapanovich
Optical properties of (CuInSe2)1 − x (2MnSe) x alloys
I. V. Bodnar
Specific features of conductivity of γ-irradiated TlGaTe2 crystals with nanochain structure
R. M. Sardarli, O. A. Samedov, A. P. Abdullayev, E. K. Huseynov, F. T. Salmanov, G. R. Safarova
Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic
N. A. Torkhov
Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon
L. O. Olimov
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers
I. G. Atabaev, N. A. Matchanov, M. U. Hajiev, V. Pak, T. M. Saliev
Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer
P. A. Dementyev, M. S. Dunaevskii, Yu. B. Samsonenko, G. E. Cirlin, A. N. Titkov
Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells
V. I. Gavrilenko, A. V. Ikonnikov, S. S. Krishtopenko, A. A. Lastovkin, K. V. Marem’yanin, Yu. G. Sadofyev, K. E. Spirin
Study and simulation of magnetic susceptibility of Si and Si0.95Ge0.05 whiskers
V. M. Tsmots, P. G. Litovchenko, N. T. Pavlovska, Yu. V. Pavlovskyy, I. P. Ostrovskyy
Dependence of the stimulated luminescence threshold in ZnO nanocrystals on their geometric shape
A. N. Gruzintsev, A. N. Redkin, C. Barthou
Structural features of the photogeneration mechanism of free charge carriers in element-containing polydisalicylidene azomethine series
E. L. Aleksandrova, A. G. Ivanov, N. M. Geller, V. V. Shamanin
Optical properties of iron-passivated nanoporous silicon
O. Yu. Shevchenko, D. N. Goryachev, L. V. Belyakov, O. M. Sreseli
Some features of photocurrent generation in single- and multibarrier photodiode structures
A. V. Karimov, D. M. Yodgorova
Excess leakage currents in high-voltage 4H-SiC Schottky diodes
P. A. Ivanov, I. V. Grekhov, A. S. Potapov, T. P. Samsonova, N. D. Il’inskaya, O. I. Kon’kov, O. Yu. Serebrennikova
Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates
I. P. Smirnova, L. K. Markov, E. M. Arakcheeva, A. S. Pavluchenko, D. A. Zakgeim, M. M. Kulagina
Temperature delocalization of charge carriers in semiconductor lasers
S. O. Slipchenko, I. S. Shashkin, L. S. Vavilova, D. A. Vinokurov, A. V. Lyutetskiy, N. A. Pikhtin, A. A. Podoskin, A. L. Stankevich, N. V. Fetisova, I. S. Tarasov
Features of subthreshold defect formation in CdS and CdS:Cu single crystals subjected to irradiation with X-ray photons
G. L. Mironchuk, H. Ye. Davidyuk, V. V. Bozhko, V. Kažukauskas
Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors
A. N. Semenov, Ya. V. Terent’ev, B. Ya. Meltser, V. A. Solov’ev, T. V. Popova, A. V. Nashchekin, I. A. Andreev, E. V. Kunitsyna, A. A. Usikova, Yu. P. Yakovlev, S. V. Ivanov
Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation
V. V. Emtsev, A. M. Ivanov, V. V. Kozlovskii, A. A. Lebedev, G. A. Oganesyan, N. B. Strokan
Luminescent and structural properties of ZnO-Ag films
V. S. Khomchenko, V. I. Kushnirenko, V. P. Papusha, A. K. Savin, O. S. Lytvyn