Ausgabe 5/2016
Inhalt (25 Artikel)
Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications
I. V. Bodnar
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals
V. V. Sobolev, D. A. Perevoshchikov
X-ray conductivity of ZnSe single crystals
V. Ya. Degoda, G. P. Podust
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin, B. N. Zvonkov
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase
A. V. Alpatov, S. P. Vikhrov, A. G. Kazanskii, V. L. Lyaskovskii, N. B. Rybin, N. V. Rybina, P. A. Forsh
Atomic steps on an ultraflat Si(111) surface upon sublimation
S. V. Sitnikov, A. V. Latyshev, S. S. Kosolobov
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films
V. I. Avilov, O. A. Ageev, B. G. Konoplev, V. A. Smirnov, M. S. Solodovnik, O. G. Tsukanova
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide
A. S. Il’in, N. P. Fantina, M. N. Martyshov, P. A. Forsh, A. S. Chizhov, M. N. Rumyantseva, A. M. Gaskov, P. K. Kashkarov
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
A. Yu. Egorov, L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, V. N. Nevedomskiy, V. E. Bugrov
A new simulation model for inhomogeneous Au/n-GaN structure
Nese Kavasoglu, Abdulkadir Sertap Kavasoglu, Bengul Metin
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites
H. A. Mamedov, L. Parali, M. A. Kurbanov, A. A. Bayramov, F. N. Tatardar, I. Sabikoglu
Lifetime of excitons localized in Si nanocrystals in amorphous silicon
O. B. Gusev, A. V. Belolipetskiy, I. N. Yassievich, A. V. Kukin, E. E. Terukova, E. I. Terukov
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
V. P. Popov, M. A. Ilnitskii, E. D. Zhanaev, A. V. Myakon’kich, K. V. Rudenko, A. V. Glukhov
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM
G. B. Stefanovich, A. L. Pergament, P. P. Boriskov, V. A. Kuroptev, T. G. Stefanovich
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure
N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova
GaAs/InGaAsN heterostructures for multi-junction solar cells
E. V. Nikitina, A. S. Gudovskikh, A. A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
M. E. Levinshtein, P. A. Ivanov, Q. J. Zhang, J. W. Palmour
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevski, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maximov, Zh. I. Alferov
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure
M. I. Vexler, I. V. Grekhov
Radiation-stimulated processes in transistor temperature sensors
B. V. Pavlyk, A. S. Grypa
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure
A. I. Gusev, S. I. Sadovnikov
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
V. I. Kozlovskiy, V. S. Krivobok, P. I. Kuznetsov, S. N. Nikolaev, E. E. Onistchenko, A. A. Pruchkina, A. G. Temiryazev
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon
I. V. Guk, G. D. Shandybina, E. B. Yakovlev
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates
M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, P. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter