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Semiconductors

Ausgabe 7/2018

Inhalt (25 Artikel)

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Matrix Calculation of the Spectral Characteristics of AII–BVI Semiconductors Doped with Iron-Group Ions

I. S. Kurchatov, E. F. Kustov

Electronic Properties of Semiconductors

Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–x–ySn x V y Te Alloys upon Doping

E. P. Skipetrov, N. S. Konstantinov, L. A. Skipetrova, A. V. Knotko, V. E. Slynko

Electronic Properties of Semiconductors

Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation

Z. A. Jahangirli, F. M. Hashimzade, D. A. Huseynova, B. G. Mehdiyev, N. B. Mustafaev

Spectroscopy, Interaction with Radiation

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation

A. N. Tereshchenko, D. S. Korolev, A. N. Mikhaylov, A. I. Belov, A. A. Nikolskaya, D. A. Pavlov, D. I. Tetelbaum, E. A. Steinman

Spectroscopy, Interaction with Radiation

Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates

L. P. Avakyants, P. Yu. Bokov, I. P. Kazakov, M. A. Bazalevsky, P. M. Deev, A. V. Chervyakov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Transverse Nernst–Ettingshausen Effect in Superlattices Upon Electron-Phonon Scattering

S. R. Figarova, H. I. Huseynov, V. R. Figarov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon

H. P. Parkhomenko, M. N. Solovan, P. D. Maryanchuk

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation

D. S. Ponomarev, R. A. Khabibullin, A. N. Klochkov, A. E. Yachmenev, A. S. Bugaev, D. I. Khusyainov, A. M. Buriakov, V. P. Bilyk, E. D. Mishina

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties

R. A. Salii, I. S. Kosarev, S. A. Mintairov, A. M. Nadtochiy, M. Z. Shvarts, N. A. Kalyuzhnyy

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells

G. Pozina, M. A. Kaliteevski, E. V. Nikitina, A. R. Gubaidullin, K. A. Ivanov, A. Yu. Egorov

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Photoelectric Properties of ZnO Threadlike Crystals

P. S. Shkumbatjuk

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K

S. A. Kozyukhin, S. A. Bedin, P. G. Rudakovskaya, O. S. Ivanova, V. K. Ivanov

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure

V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods

S. S. Kurbanov, Sh. Z. Urolov, Z. Sh. Shaymardanov, H. D. Cho, T. W. Kang

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Modification of Photoconductivity Spectra in ZnO–CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation

K. A. Drozdov, I. V. Krylov, A. S. Chizhov, M. N. Rumyantseva, L. I. Ryabova, D. R. Khokhlov

Carbon Systems

Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering

A. Ya. Vinogradov, S. A. Grudinkin, N. A. Besedina, S. V. Koniakhin, M. K. Rabchinskii, E. D. Eidelman, V. G. Golubev

Physics of Semiconductor Devices

Study of Deep Levels in a HIT Solar Cell

S. P. Vikhrov, N. V. Vishnyakov, V. V. Gudzev, A. V. Ermachikhin, D. V. Shilina, V. G. Litvinov, A. D. Maslov, V. G. Mishustin, E. I. Terukov, A. S. Titov

Physics of Semiconductor Devices

Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers

E. I. Terukov, A. S. Abramov, D. A. Andronikov, K. V. Emtsev, I. E. Panaiotti, A. S. Titov, G. G. Shelopin

Physics of Semiconductor Devices

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Tal’nishnih, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovski, M. F. Kudoyarov, A. V. Saharov, A. G. Oganesyan, D. S. Poloskin, V. V. Lundin

Fabrication, Treatment, and Testing of Materials and Structures

On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers

V. V. Mamutin, A. P. Vasilyev, A. V. Lyutetskiy, N. D. Ilyinskaya, Yu. M. Zadiranov, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev, N. A. Maleev, V. M. Ustinov

Fabrication, Treatment, and Testing of Materials and Structures

Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching

M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. N. Rodin, M. A. Kaliteevski, V. P. Evtikhiev

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