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Optical and Quantum Electronics

Erschienen in:

01.11.2018

Signature of the ideality factor in III-nitride multi quantum well light emitting diodes

verfasst von: Friedhard Römer, Bernd Witzigmann

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2018

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Abstract

The ideality factor in recent III-nitride light emitting diodes (LED) is expected to approach values close to \(\eta \approx 1\) near the maximum of the internal quantum efficiency (IQE) because the bimolecular recombination dominates there. However, the electrical characterisation of multi quantum well (MQW) LEDs often yields values which are more close to \(\eta \approx 2\) or even more. To analyse the effect of the MQW on the ideality factor we derive an electrical model based on lumped circuit elements. By comparing the model results with the physical simulations of the ideality factor we demonstrate its validity. The detailed analysis of the circuit elements reveals that the electron scattering has a major impact on the ideality factor near the maximum of the IQE. We show that the ideality factor presents a signature for the hole injection efficiency and thus can be used to estimate the IQE characteristic in the high current regime.

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Titel: Signature of the ideality factor in III-nitride multi quantum well light emitting diodes
verfasst von: Friedhard Römer
Bernd Witzigmann
Publikationsdatum: 01.11.2018
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 11/2018
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-017-1264-4

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