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Erschienen in:
High-k Dielectric for Nanoscale MOS Devices Kapitel lesen Erstes Kapitel lesen

2017 | OriginalPaper | Buchkapitel

7. Silicon-Based Junctionless MOSFETs: Device Physics, Performance Boosters and Variations

verfasst von : Xinnan Lin, Haijun Lou, Ying Xiao, Wenbo Wan, Lining Zhang, Mansun Chan

Erschienen in: Outlook and Challenges of Nano Devices, Sensors, and MEMS

Verlag: Springer International Publishing

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Abstract

In this chapter, we provide a review on the junctionless transistors which are promising nanoscale devices in terms of controlled doping fluctuations. We introduce a physics-based analytical model to describe the transistors’ characteristics in all the operation regions through which their device physics are clearly illustrated. Based on that, several performance boosters with geometry engineering are described to enhance the performance of junctionless transistors. Nonetheless, junctionless transistors are still subject to certain variations even with limited doping fluctuations. We discuss about the cross section and line edge roughness as two main variation sources and also explain one possible solution using the charge plasma concept to further suppress the variations.

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Vorheriges Kapitel Low Trigger Voltage and High Turn-On Speed SCR for ESD Protection in Nanometer Technology
Nächstes Kapitel Effect of Nanoscale Structure on Reliability of Nano Devices and Sensors
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Metadaten
Titel
Silicon-Based Junctionless MOSFETs: Device Physics, Performance Boosters and Variations
verfasst von
Xinnan Lin
Haijun Lou
Ying Xiao
Wenbo Wan
Lining Zhang
Mansun Chan
Copyright-Jahr
2017
Buch
Outlook and Challenges of Nano Devices, Sensors, and MEMS

Print ISBN: 978-3-319-50822-1

Electronic ISBN: 978-3-319-50824-5

Copyright-Jahr: 2017

DOI
https://doi.org/10.1007/978-3-319-50824-5_7

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