Anzeige
Erschienen in:
2024 | OriginalPaper | Buchkapitel
Simulation of a GNR-FET
verfasst von : Giovanni Nastasi, Vittorio Romano
Erschienen in: Scientific Computing in Electrical Engineering
Verlag: Springer Nature Switzerland
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
A field effect transistor is simulated in the case the active area is made by a single graphene nanoribbon. At variance with large area graphene, an energy gap is present and this should improve the performance of the device as transistor. A drift-diffusion model which includes the degenerate effects, coupled to the Poisson equation for the electrostatic potential, is used. The mobility models are obtained, by a fitting procedure, solving numerically the semiclassical Boltzmann equation for the graphene nanoribbon, including also the edges scattering besides the electron-phonon interactions.