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Erschienen in: Journal of Materials Science: Materials in Electronics 12/2013

01.12.2013

Structure transition and enhanced ferroelectric properties of (Mn, Cr) co-doped BiFeO3 thin films

verfasst von: Wenlong Liu, Guoqiang Tan, Xu Xue, Guohua Dong, Huijun Ren

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2013

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Abstract

Pure BiFeO3 (BFO) and (Mn, Cr) co-doped BiFe0.96−yMn0.04CryO3 thin films were prepared on FTO/glass (SnO2:F) substrates by using a sol–gel method. The effects of (Mn, Cr) co-doped on the microstructure and electric properties of the BiFeO3 thin films were studied. The result indicates that the co-doped BiFe0.94Mn0.04Cr0.02O3 (BFMCO) thin film has a structure transition and better ferroelectric properties compared with the pure BFO thin film. The Rietveld refined XRD patterns of BFO and BFMCO thin films conform the trigonal (R3c:H) and the biphasic (R3c:H + R3m:R) structure, respectively. The co-existence of two phases and the mixed valences of Cr3+/6+ and Mn2+/3+, which apparently improves the electric properties of the (Mn, Cr) co-doped BFMCO thin films. The remnant polarization (P r) of the BFMCO thin film was 93.58 μC/cm2 at 1 kHz in the applied electric field of 636 kV/cm. At an applied electric field of 100 kV/cm, the leakage current density of (Mn, Cr) co-doped BFMCO thin film is 6.2 × 10−6 A/cm2. It is about three orders much lower than that of the BFO thin film (1.43 × 10−3 A/cm2).

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Metadaten
Titel
Structure transition and enhanced ferroelectric properties of (Mn, Cr) co-doped BiFeO3 thin films
verfasst von
Wenlong Liu
Guoqiang Tan
Xu Xue
Guohua Dong
Huijun Ren
Publikationsdatum
01.12.2013
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2013
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1482-x

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